Sb-heterostructure interband backward diodes

IEEE Electron Device Letters

Volumn 21, Issue 7, 2000, Pages 353-355

  Schulman, J N ^a   Chow, D H ^a  

^a Hughes Aircraft Co   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; ELECTRON TUNNELING; HETEROJUNCTIONS; IMAGING TECHNIQUES; MILLIMETER WAVE DEVICES; MIXER CIRCUITS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ANTIMONY; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR GROWTH;

BACKWARD DIODES; ESAKI TUNNEL DIODES; MILLIMETER WAVE DETECTORS; MILLIMETER WAVE IMAGING; MILLIMETER WAVE MIXERS;

TUNNEL DIODES;

EID: 0034217269     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.847378     Document Type: Article

References (9)

1. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
2. C. A. Burrus Jr., "Backward diodes for low-level millimeter-wave detection," IEEE Trans. Microwave Theory Tech., vol. MTT-11, pp. 357-362, 1963.
3. R. T. Syme, "Microwave detection using GaAs/AlAs tunnel structures," GEC J. Res., vol. 11, pp. 12-23, 1993.
4. J. N. Schulman, D. H. Chow, and D. M. Jang, "InGaAs backward diodes,", in preparation.
5. H. Takaoka et al., "GaSb-AlSb-InAs multi-heterojunctions," Physica, vol. 117B, 118B, pp. 741-743, 1983.
6. L. F. Luo, R. Beresford, and W. I. Wang, "Interband tunneling in polytype GaSb/AlSb/InAs heterostructures," Appl. Phys. Lett., vol. 55, pp. 2023-2025, 1989.
7. J. F. Chen et al., "On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures," J. Appl. Phys., vol. 68, pp. 3451-3455, 1990.
8. V. S. Reinhardt et al., "Methods for measuring the power linearity of microwave detectors for radiometric applications," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 715-720, 1995.
9. "Passive millimeter wave imaging technology III," Proc. SPIE, vol. 3703, April 1999.