Role of InAs and GaAs terminated heterointerfaces at source/channel on the mixed As-Sb staggered gap tunnel field effect transistor structures grown by molecular beam epitaxy

Journal of Applied Physics

Volumn 112, Issue 2, 2012, Pages

  Zhu, Y ^a   Jain, N ^a   Vijayaraghavan, S ^a   Mohata, D K ^b   Datta, S ^b   Lubyshev, D ^c   Fastenau, J M ^c   Liu, W K ^c   Monsegue, N ^a   Hudait, M K ^a  

^a Virginia Polytechnic Institute and State University   (United States)

^b The Pennsylvania State University   (United States)

^c IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; BAND ALIGNMENTS; BAND TO BAND TUNNELING; BROKEN GAPS; CARRIER RECOMBINATION; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEFECT PROPERTY; DEFECT-FREE; DISLOCATION DENSITIES; DRAIN LAYERS; GAAS; GENERATION-RECOMBINATION PROCESS; HETERO-INTERFACES; INAS; INP SUBSTRATES; LATTICE TILTS; OFF-STATE LEAKAGE CURRENT; POSITIVE CHARGES; PSEUDOMORPHIC GROWTH; RECIPROCAL LATTICE POINTS; RECIPROCAL SPACE MAPS; ROOT MEAN SQUARE ROUGHNESS; SHOCKLEY-READ-HALL; STRUCTURAL DIFFERENCES; TUNNEL FIELD EFFECT TRANSISTOR; ULTRALOW POWER APPLICATION;

ALIGNMENT; ATOMIC FORCE MICROSCOPY; DEFECTS; EPITAXIAL GROWTH; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; HETEROJUNCTIONS; INDIUM; INDIUM ARSENIDE; LEAKAGE CURRENTS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACES (MATERIALS);

EID: 84865464032     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4737462     Document Type: Article

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