Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors

Journal of Crystal Growth

Volumn 314, Issue 1, 2011, Pages 92-96

  Huang, Y ^a   Ryou, J H ^a   Dupuis, R D ^a,b   D'costa, V R ^c   Steenbergen, E H ^c   Fan, J ^c   Zhang, Y H ^c   Petschke, A ^d   Mandl, M ^d   Chuang, S L ^d  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b Georgia Institute of Technology   (United States)

^c Arizona State University   (United States)

^d United States of America   (United States)

Author keywords

A1. Low dimensional structures; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting IIIV materials; B3. Infrared devices

Indexed keywords

B3. INFRARED DEVICES; BAND GAPS; DEVICE-QUALITY; INAS/GASB; INTERFACIAL LAYER; LONG-WAVELENGTH INFRARED; LOW DIMENSIONAL STRUCTURE; LOW STRAINS; MATERIAL QUALITY; METAL-ORGANIC VAPOR PHASE EPITAXY; METALORGANIC CHEMICAL VAPOR DEPOSITION; OPTIMAL MORPHOLOGY; PRECURSOR FLOW; ROOT MEAN SQUARE ROUGHNESS; SEMI CONDUCTING III-V MATERIALS; STRAIN MANAGEMENT; STRAIN-BALANCED; SUPER-LATTICE STRUCTURES; SWITCHING SCHEME; TYPE-II SUPERLATTICES;

EPITAXIAL GROWTH; GALLIUM ALLOYS; INDIUM ANTIMONIDES; INFRARED DEVICES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR GROWTH; STRUCTURAL OPTIMIZATION; SUPERLATTICES; VAPORS;

TENSILE STRAIN;

EID: 78651096326     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.11.003     Document Type: Article

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