Arsenic for antimony exchange on GaSb, its impacts on surface morphology, and interface structure

Journal of Applied Physics

Volumn 86, Issue 1, 1999, Pages 329-337

  Xie, Qianghua ^a,b   Van Nostrand, J E ^a   Brown, J L ^a   Stutz, C E ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000882941     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370733     Document Type: Article

References (41)

1. C. R. Bolognesi and D. H. Chow, IEEE Electron Device Lett. 17, 534 (1996).
2. G. C. Osbourn, J. Vac. Sci. Technol. B 2, 176 (1984).
3. D. L. Smith and C. Mailhiot, J. Appl. Phys. 62, 2545 (1987).
4. F. Fuchs, U. Weimer, W. Fletschen, J. Schmitz, E. Ahlswede, M. Walther, J. Wagner, and P. Koidl, Appl. Phys. Lett. 71, 3251 (1997).
5. J. L. Johnson, L. A. Samoska, A. C. Gossard, J. L. Merz, M. D. Jack, G. R. Chapman, B. A. Baumgratz, K. Kosai, and S. M. Johnson, J. Appl. Phys. 80, 1116 (1996).
6. J. Diaz, H. Yi, A. Rybaltowski, B. Lane, G. Lukas, D. Wu, S. Kim, M. Erdtman, E. Kaas, and M. Razeghi, Appl. Phys. Lett. 70, 40 (1997).
7. H. K. Choi and S. Eglash, IEEE J. Quantum Electron. 27, 1555 (1991).
8. R. Q. Yang, B. H. Yang, D. Zhang, C.-H. Lin, S. J. Murry, and S. S. Pei, Appl. Phys. Lett. 71, 2409 (1997).
9. M. W. Wang, D. A. Collins, T. C. McGill, R. W. Grant, and R. M. Feenstra, Appl. Phys. Lett. 66, 2981 (1995).
10. F. Szmulowicz, E. R. Helller, K. Fisher, and F. L. Madarasz, Superlattices Microstruct. 17, 373 (1995).
11. K. Shiralagi, J. Shen, and R. Tsui, J. Electron. Mater. 26, 1417 (1997).
12. H. Herres, F. Fuchs, J. Schmitz, K. M. Pavlov, J. Wagner, J. D. Ralston, and P. Koidl, Phys. Rev. B 53, 15688 (1996).
13. M. W. Wang, D. A. Collins, T. C. McGill, R. W. Grant, and R. M. Feenstra, J. Vac. Sci. Technol. B 13, 1689 (1995).
14. R. M. Feenstra, D. A. Collins, D. Z.-Y. Ting, M. W. Wang, and T. C. McGill, Phys. Rev. Lett. 72, 2749 (1994); A. Y. Lew, E. T. Yu, D. H. Chow, and R. H. Miles, Appl. Phys. Lett. 65, 201 (1994).
15. R. M. Feenstra, D. A. Collins, D. Z.-Y. Ting, M. W. Wang, and T. C. McGill, Phys. Rev. Lett. 72, 2749 (1994); A. Y. Lew, E. T. Yu, D. H. Chow, and R. H. Miles, Appl. Phys. Lett. 65, 201 (1994).
16. Z. Sobiesierski, D. I. Westwood, P. J. Parbrook, K. B. Ozanyan, M. Hopkinson, and C. R. Whitehouse, Appl. Phys. Lett. 70, 1423 (1997).
17. J. Schmitz, J. Wagner, F. Fuchs, N. Herres, P. Koidl, and J. D. Ralston, J. Cryst. Growth 150, 858 (1995).
18. J. M. Moison, C. Guille, F. Houzay, F. Barthe, and M. Van Rompay, Phys. Rev. B 40, 6149 (1989).
19. D. H. Chow, R. H. Miles, J. R. Soderstron, and T. C. McGill, Appl. Phys. Lett. 56, 1418 (1990).
20. B. R. Bennetl, B. V. Shanbrook, R. J. Wagner, J. L. Davis, and J. R. Waterman, Appl. Phys. Lett. 63, 949 (1993).
21. J. Spitzer, H. D. Fuchs, P. Etchegoin, M. Iig, M. Cardona, B. Brar, and H. Kroemer, Appl. Phys. Lett. 62, 2274 (1993).
22. N. Kobayashi and Y. Kobayashi, J. Cryst. Growth 124, 525 (1992).
23. K. R. Evans, C. E. Stutz, P. W. Yu, and C. R. Wie, J. Vac. Sci. Technol. B 8, 271 (1990); K. R. Evans, R. Kaspi, J. E. Ehret, M. Skowronski, and C. R. Jones, ibid. 13, 1820 (1995).
24. K. R. Evans, C. E. Stutz, P. W. Yu, and C. R. Wie, J. Vac. Sci. Technol. B 8, 271 (1990); K. R. Evans, R. Kaspi, J. E. Ehret, M. Skowronski, and C. R. Jones, ibid. 13, 1820 (1995).
25. R. Kaspi, W. T. Cooley, and K. R. Evans, J. Cryst. Growth 173, 5 (1997).
26. P. D. Brewer, D. H. Chow and R. H. Miles, J. Vac. Sci. Technol. B 14, 2335 (1996); Y. Rouillard, B. Lambert, Y. Toudic, M. Baudet, and M. Gauneau, J. Cryst. Growth 156, 30 (1995).
27. P. D. Brewer, D. H. Chow and R. H. Miles, J. Vac. Sci. Technol. B 14, 2335 (1996); Y. Rouillard, B. Lambert, Y. Toudic, M. Baudet, and M. Gauneau, J. Cryst. Growth 156, 30 (1995).
28. J. H. Neave, B. A. Joyce, D. J. Dobson, and N. Norton, Appl. Phys. A: Solids Surf. 31, 1 (1983).
29. The Sb consumption rate slowly decreases over a period of several seconds upon opening the In shutter and then saturates to a steady state value. Initial smaller Sb consumption might be a consequence of the strain in an InSb thin layer on GaSb. Thus, some of the In atoms are initially rejected. Strain relaxation in InSb, possibly via islanding, after 1-2 ML of growth eventually leads to steady state In incorporation. For fixed Sb flux and In flux, Sb consumption as a function of substrate temperature increases and then saturates as the substrate temperature decreases to below 400°C, indicating a final unity In incorporation probability being reached.
30. M. Kodama and M. Kimata, J. Cryst. Growth 73, 641 (1985).
31. H. Watanabe, K. Fujita, and M. Ichikawa, Surf. Sci. 385, L952 (1997).
32. Q. Xie, A. Madhukar, P. Chen, and N. P. Kobayashi, Phys. Rev. Lett. 75, 2542 (1995).
33. J. E. Van Nostrand, D. G. Cahill, I. Petrov, and ;. E. Greene, J. Appl. Phys. 83, 1096 (1998).
34. L. J. Whitman, P. M. Thibado, S. C. Erwin, B. R. Bennett, and B. V. Shanabrook, Phys. Rev. Lett. 79, 693 (1997).
35. R. Ludeke, Surf. Sci. 132, 143 (1983).
36. R. Heitz, T. R. Ramachandran, A. Kalburge, Q. Xie, I. Mukhametzhanov, P. Chen, and A. Madhukar, Phys. Rev. Lett. 78, 4071 (1997).
37. B. M. Clements and J. G. Gay, Phys. Rev. B 35, 9337 (1987).
38. J. Harper, M. Weimer, D. Zhang, C.-H. Lin, and S. S. Pel, J. Vac. Sci. Technol. B 16, 1389 (1998).
39. W. J. Bartels, J. Vac. Sci. Technol. B 1, 338 (1983).
40. ⊥ of 6.110 Å for nonstrain relaxation. A similar construction of the interface is used for GaAs-like or mixed type interfaces.
41. T. Marschner, J. Bubach, C. A. Verschuren, and J. H. Wolter, J. Appl. Phys. 83, 3630 (1998).