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Volumn 99, Issue 1, 2011, Pages

Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition

(11) Huang, Yong a Ryou, Jae Hyun a Dupuis, Russell D a,b Zuo, Daniel c Kesler, Benjamin c Chuang, Shun Lien c Hu, Hefei c Kim, Kyou Hyun c Ting Lu, Yen c Hsieh, K C c Zuo, Jian Min c

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b Georgia Institute of Technology (United States)

c United States of America (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANION EXCHANGE; CRYSTALLINE QUALITY; DETECTIVITY; EFFECTIVE STRAIN; FABRICATED DEVICE; IN-PLANE COMPRESSIVE STRAIN; INAS; INAS/GASB; IR ABSORPTION COEFFICIENT; MOCVD GROWTH; PEAK RESPONSIVITY; PERFORMANCE CHARACTERISTICS; PIN PHOTODIODE; SPECTRAL RANGE; STRAIN-BALANCED; SWITCHING SCHEME; TYPE-II SUPERLATTICES;

ABSORPTION; GALLIUM ARSENIDE; GROWTH (MATERIALS); INDIUM ANTIMONIDES; INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTODIODES; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM; SUBSTRATES; SUPERLATTICES;

GALLIUM ALLOYS;

EID: 79960544173 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3609240 Document Type: Article

Times cited : (25)

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