Compositional abruptness at the InAs-on-GaSb interface: Optimizing growth by using the Sb desorption signature

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 864-867

  Kaspi, R ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; INTERFACES (MATERIALS); MASS SPECTROMETRY; NEGATIVE IONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR SUPERLATTICES;

ANION INTERMIXING; DESORPTION MASS SPECTROMETRY (DMS);

MOLECULAR BEAM EPITAXY;

EID: 0032688646     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01476-6     Document Type: Article

References (4)

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2. M Feenstra R., Collins D.A., McGill T.C. Superlattice Microstruct. 15:1994;215.
3. Harper J., Weimer M., Zhang D., Lin C.-H., Pei S.S. J. Vac. Sci. Technol. B. 16:1998;1389.
4. Kaspi R., Cooley W.T., Evans K.R. J. Crystal Growth. 173:1997;5.