AlGaSb/InAs tunnel field-effect transistor with on-current of 78 μaμm at 0.5 v

IEEE Electron Device Letters

Volumn 33, Issue 3, 2012, Pages 363-365

  Li, Rui ^a   Lu, Yeqing ^a   Zhou, Guangle ^a   Liu, Qingmin ^a   Chae, Soo Doo ^a   Vasen, Tim ^a   Hwang, Wan Sik ^a   Zhang, Qin ^a   Fay, Patrick ^a   Kosel, Tom ^a   Wistey, Mark ^a   Xing, Huili ^a   Seabaugh, Alan ^a  

^a University of Notre Dame   (United States)

Author keywords

Heterojunction; tunnel field effect transistor (TFET); tunneling

Indexed keywords

DEVICE STRUCTURES; GATE FIELD; IN-LINE; MEASURED RESULTS; MOS-FET; ON-CURRENTS; OPTIMIZED STRUCTURES; ROOM TEMPERATURE; SOURCE AND DRAIN RESISTANCE; SWITCHING SPEED;

ELECTRON TUNNELING; HETEROJUNCTIONS;

FIELD EFFECT TRANSISTORS;

EID: 84862776915     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2179915     Document Type: Article

References (11)

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