Defect assistant band alignment transition from staggered to broken gap in mixed As/Sb tunnel field effect transistor heterostructure

Journal of Applied Physics

Volumn 112, Issue 9, 2012, Pages

  Zhu, Y ^a   Jain, N ^a   Vijayaraghavan, S ^a   Mohata, D K ^b   Datta, S ^b   Lubyshev, D ^c   Fastenau, J M ^c   Liu, Amy K ^c   Monsegue, N ^a   Hudait, M K ^a  

^a Virginia Polytechnic Institute and State University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; ALLOY COMPOSITIONS; BAND ALIGNMENTS; BROKEN GAPS; COMPOSITIONAL DEPENDENCE; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEFECT PROPERTY; GAAS; HETERO INTERFACES; HIGH DEFECT DENSITIES; HIGH QUALITY SOURCE; HIGH RESOLUTION X RAY DIFFRACTION; INTERFACE PROPERTY; LATTICE-MATCHED; LOGIC APPLICATIONS; LOW DEFECT DENSITIES; N-CHANNEL; OFF-STATE LEAKAGE; OFF-STATE LEAKAGE CURRENT; ON STATE CURRENT; ORDERS OF MAGNITUDE; TRANSFER CHARACTERISTICS; TUNNEL FIELD EFFECT TRANSISTOR; TUNNELING BARRIER HEIGHTS;

ALIGNMENT; DEFECTS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; INTERFACE STATES; PHOTOELECTRONS; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

DEFECT DENSITY;

EID: 84870925303     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4764880     Document Type: Article

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