Enhancement of p-type mobility in tin monoxide by native defects

Applied Physics Letters

Volumn 102, Issue 21, 2013, Pages

  Granato, D B ^a   Caraveo Frescas, J A ^a   Alshareef, H N ^a   Schwingenschlogl U ^a  

^a KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; ELECTRONIC STRUCTURE; SEMICONDUCTOR JUNCTIONS; VALENCE BANDS;

BAND MODIFICATIONS; DEFECT EFFECTS; INTERSTITIALS; NATIVE DEFECT; O VACANCIES; TIN MONOXIDES; TRANSPARENT P-N JUNCTIONS; TRANSPARENT P-TYPE SEMICONDUCTOR;

HOLE MOBILITY;

EID: 84879115278     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4808382     Document Type: Article

References (26)

1. S. Sheng, G. Fang, C. Li, S. Xu, and X. Zhao, Phys. Status Solidi A 203, 1891 (2006). 10.1002/pssa.200521479
2. D. S. Ginley and C. Bright, MRS Bull. 25, 15 (2000). 10.1557/mrs2000.256
3. P. D. C. King and T. D. Veal, J. Phys.: Condens. Matter 23, 334214 (2011). 10.1088/0953-8984/23/33/334214
4. G. Thomas, Nature 389, 907 (1997). 10.1038/39999
5. E. Fortunato, P. Barquinha, and R. Martins, Adv. Mater. 24, 2945 (2012). 10.1002/adma.201103228
6. H. Hosono, Y. Ogo, H. Yanagi, and T. Kamiya, Electrochem. Solid State Lett. 14, H13 (2011). 10.1149/1.3505288
7. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Appl. Phys. Lett. 93, 032113 (2008). 10.1063/1.2964197
8. E. Fortunato and R. Martins, Phys. Status Solidi RRL 5, 336 (2011). 10.1002/pssr.201105246
9. H. Kawazoe, M. Yasukawa, H. Hyodo, M. Kurita, H. Yanagi, and H. Hosono, Nature 389, 939 (1997). 10.1038/40087
10. H. Yanagi, H. Kawazoe, A. Kudo, M. Yasukawa, and H. Osono, J. Electroceram. 4, 407 (2000). 10.1023/A:1009959920435
11. Y. Ogo, H. Hiramatsu, K. Nomura, H. Yanagi, T. Kamiya, M. Kimura, M. Hirano, and H. Hosono, Phys. Status Solidi A 206, 2187 (2009). 10.1002/pssa.200881792
12. E. Fortunato, R. Barros, P. Barquinha, V. Figueiredo, S. -H. K. Park, C.-S. Hwang, and R. Martins, Appl. Phys. Lett. 97, 052105 (2010). 10.1063/1.3469939
13. A. Togo, F. Oba, I. Tanaka, and K. Tatsumi, Phys. Rev. B 74, 195128 (2006). 10.1103/PhysRevB.74.195128
14. P. E. Blöchl, Phys. Rev. B 50, 17953 (1994). 10.1103/PhysRevB.50. 17953
15. G. Kresse and D. Joubert, Phys. Rev. B 59, 1758 (1999). 10.1103/PhysRevB.59.1758
16. G. Kresse and J. Furthmüller, Comput. Mater. Sci. 6, 15 (1996). 10.1016/0927-0256(96)00008-0
17. G. Kresse and J. Furthmüller, Phys. Rev. B 54, 11169 (1996). 10.1103/PhysRevB.54.11169
18. J. P. Perdew, K. Burke, and M. Ernzerhof, Phys. Rev. Lett. 77, 3865 (1996). 10.1103/PhysRevLett.77.3865
19. H. J. Monkhorst and J. D. Pack, Phys. Rev. B 13, 5188 (1976). 10.1103/PhysRevB.13.5188
20. E. Sanville and S. Kenny, J. Comput. Chem. 28, 899 (2007). 10.1002/jcc.20575
21. W. Tang, E. Sanville, and G. Henkelman, J. Phys.: Condens. Matter 21, 084204 (2009). 10.1088/0953-8984/21/8/084204
22. F. Izumi, J. Solid State Chem. 38, 381 (1981). 10.1016/0022-4596(81) 90068-2
23. J. P. Allen, D. O. Scanlon, S. C. Parker, and G. W. Watson, J. Phys. Chem. C 115, 19916 (2011). 10.1021/jp205148y
24. A. Walsh and G. W. Watson, Phys. Rev. B 70, 235114 (2004). 10.1103/PhysRevB.70.235114
25. A. Walsh and G. W. Watson, J. Phys. Chem. B 109, 18868 (2005). 10.1021/jp051822r
26. J. A. Caraveo-Frescas, P. K. Nayak, H. A. Al-Jawhari, D. B. Granato, U. Schwingenschlögl, and H. N. Alshareef, " Record Mobility in Transparent p-Type Tin Monoxide Films and Devices by Phase Engineering.," ACS Nano (to be published). 10.1021/nn400852r