Optimization of poly(vinylidene fluoride-trifluoroethylene) films as non-volatile memory for flexible electronics

Organic Electronics

Volumn 11, Issue 5, 2010, Pages 925-932

  Mao, D ^a   Quevedo Lopez, M A ^a   Stiegler, H ^a   Gnade, B E ^a   Alshareef, H N ^b  

^a The University of Texas at Dallas   (United States)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

Author keywords

Ferroelectric polymer; Flexible electronics; Non volatile memory; P(VDF TrFE)

Indexed keywords

ANNEALING; FERROELECTRICITY; FILM THICKNESS; FLUORINE COMPOUNDS; LEAKAGE CURRENTS; METAL ANALYSIS; NONVOLATILE STORAGE; POLARIZATION; THIN FILMS;

ANNEALING TEMPERATURES; ELECTRICAL PERFORMANCE; FERROELECTRIC POLYMERS; METAL-FERROELECTRIC METALS; NON-VOLATILE MEMORY; POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE); POLY(VINYLIDENE FLUORIDE-TRIFLUOROETHYLENE) [P(VDF-TRFE)]; PVDF-TRFE;

FLEXIBLE ELECTRONICS;

EID: 77950577581     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.02.012     Document Type: Article

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