Tin monoxide as an s-orbital-based p-type oxide semiconductor: Electronic structures and TFT application

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 9, 2009, Pages 2187-2191

  Ogo, Yoichi ^a   Hiramatsu, Hidenori ^a   Nomura, Kenji ^a   Yanagi, Hiroshi ^a   Kamiya, Toshio ^a   Kimura, Mutsumi ^b   Hirano, Masahiro ^a   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b RYUKOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CLOSED SHELLS; ELECTRICAL PROPERTY; FIELD-EFFECT MOBILITIES; FIRST-PRINCIPLES CALCULATION; HOLE CONDUCTION; HOLE DENSITIES; ON/OFF CURRENT RATIO; ORBITALS; ORDERS OF MAGNITUDE; OXIDE SEMICONDUCTOR; P-TYPE; SUBTHRESHOLD; TOP GATE; VOLTAGE SWINGS;

ELECTRIC PROPERTIES; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; EPITAXIAL FILMS; EPITAXIAL GROWTH; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; HOLE MOBILITY; POTENTIAL ENERGY; POTENTIAL ENERGY SURFACES; PULSED LASER DEPOSITION; THIN FILM TRANSISTORS; TIN;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70349143144     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200881792     Document Type: Article

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