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Volumn 49, Issue 2 Part 1, 2010, Pages

P-Channel tin monoxide thin film transistor fabricated by vacuum thermal evaporation

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS PHASE; AS-DEPOSITED FILMS; BOTTOM-CONTACT; CURRENT RATIOS; FIELD-EFFECT MOBILITIES; OXIDE SEMICONDUCTOR; P-TYPE; POLYCRYSTALLINE; SEMICONDUCTOR THIN FILMS; THERMAL-ANNEALING; VACUUM THERMAL EVAPORATION;

EID: 77950791171     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.49.020202     Document Type: Article
Times cited : (51)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.