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Volumn 49, Issue 2 Part 1, 2010, Pages
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P-Channel tin monoxide thin film transistor fabricated by vacuum thermal evaporation
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Author keywords
[No Author keywords available]
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Indexed keywords
AMORPHOUS PHASE;
AS-DEPOSITED FILMS;
BOTTOM-CONTACT;
CURRENT RATIOS;
FIELD-EFFECT MOBILITIES;
OXIDE SEMICONDUCTOR;
P-TYPE;
POLYCRYSTALLINE;
SEMICONDUCTOR THIN FILMS;
THERMAL-ANNEALING;
VACUUM THERMAL EVAPORATION;
AMORPHOUS FILMS;
GALVANOMAGNETIC EFFECTS;
HALL MOBILITY;
HOLE CONCENTRATION;
OXIDE FILMS;
THIN FILM TRANSISTORS;
THIN FILMS;
TIN;
TITANIUM COMPOUNDS;
VACUUM;
VACUUM EVAPORATION;
THERMAL EVAPORATION;
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EID: 77950791171
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.49.020202 Document Type: Article |
Times cited : (51)
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References (12)
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