Top-gate low-threshold voltage p-Cu2O thin-film transistor grown on SiO2/Si substrate using a high-κ HfON gate dielectric

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 827-829

  Zou, Xiao ^a,b   Fang, Guojia ^a   Yuan, Longyan ^a   Li, Meiya ^a   Guan, Wenjie ^a   Zhao, Xingzhong ^a  

^a WUHAN UNIVERSITY   (China)

^b JIANGHAN UNIVERSITY   (China)

Author keywords

HfON; polycrystalline Cu2O; thin film transistors (TFTs); threshold voltage

Indexed keywords

DIFFERENT SUBSTRATES; IONIZED DEFECTS; LOW THRESHOLD VOLTAGE; LOW THRESHOLDS; OFF CURRENT; POLYCRYSTALLINE; POLYCRYSTALLINE CU2O; SATURATION MOBILITY; SI SUBSTRATES; SUBTHRESHOLD SWING; TOP-GATE;

GALVANOMAGNETIC EFFECTS; GATE DIELECTRICS; GATES (TRANSISTOR); GRAIN BOUNDARIES; HALL MOBILITY; PULSED LASER DEPOSITION; PULSED LASERS; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON COMPOUNDS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 77955173848     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2050576     Document Type: Article

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