Migration of sintered nanosilver on alumina and aluminum nitride substrates at high temperatures in dry air for electronic packaging

IEEE Transactions on Device and Materials Reliability

Volumn 14, Issue 2, 2014, Pages 600-606

  Lu, Guo Quan ^a,b   Yang, Wen ^a   Mei, Yun Hui ^a   Li, Xin ^a   Chen, Gang ^a   Chen, Xu ^a  

^a TIANJIN UNIVERSITY   (China)

^b VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

activation energy; aluminum nitride (AlN); high temperature biased testing; lifetime prediction; power electronics

Indexed keywords

ACTIVATION ENERGY; ALUMINUM; ALUMINUM NITRIDE; ELECTRODES; ELECTRONICS PACKAGING; POWER ELECTRONICS; SILVER; SINTERED ALUMINA; SINTERING;

ALUMINUM NITRIDE (ALN); ELECTRONIC PACKAGING; HIGH TEMPERATURE; LIFETIME PREDICTION; NANO-SILVER PASTES; PHENOMENOLOGICAL MODELING; POWER ELECTRONIC PACKAGING; SEMICONDUCTOR CHIPS;

SUBSTRATES;

EID: 84902178982     PISSN: 15304388     EISSN: 15582574     Source Type: Journal    
DOI: 10.1109/TDMR.2014.2304737     Document Type: Article

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