Migration of sintered nanosilver die-attach material on alumina substrate at high temperatures

ICEPT-HDP 2011 Proceedings - 2011 International Conference on Electronic Packaging Technology and High Density Packaging

Volumn , Issue , 2011, Pages 787-792

  Mei, Yunhui ^a   Ibitayo, Dimeji ^b   Chen, Xu ^a   Luo, Susan ^c   Lu, Guo Quan ^d  

^a TIANJIN UNIVERSITY   (China)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c NBE Technologies LLC   (United States)

^d Virginia Polytechnic Institute and State University   (United States)

Author keywords

High temperature die attach; Low temperature sintering; Nanosilver paste; Silver migration

Indexed keywords

ALUMINA SUBSTRATES; DIE-ATTACH MATERIALS; DRY AIR; ELECTRODE GAP; ELECTRODE PAIRS; EXTERNAL PRESSURES; HIGH TEMPERATURE; HIGH-TEMPERATURE DIE-ATTACH; HIGH-TEMPERATURE PACKAGING; INCUBATION PERIODS; JOINING TECHNOLOGY; LOW TEMPERATURES; LOW-TEMPERATURE SINTERING; NANO SILVER; NANOSCALE SILVER PASTE; OPTICAL MICROSCOPES; OXYGEN EXPOSURE; OXYGEN PARTIAL PRESSURE; PHENOMENOLOGICAL MODELS; SILVER DENDRITES; SILVER MIGRATION;

DIES; ELECTRIC FIELDS; ELECTRODES; ENERGY DISPERSIVE SPECTROSCOPY; HIGH TEMPERATURE APPLICATIONS; JOINING; LEAKAGE CURRENTS; OXYGEN; PACKAGING; PARTIAL PRESSURE; POSITIVE IONS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DEVICES; SILVER; SINTERED ALUMINA; SINTERING;

CHIP SCALE PACKAGES;

EID: 81355135690     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICEPT.2011.6066949     Document Type: Conference Paper

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