SCOPUS 정보 검색 플랫폼

Volumn 309, Issue , 2014, Pages 263-270

Transmission electron microscopy on early-stage tin oxide film morphology grown by atmospheric pressure chemical vapor deposition

(4) Mannie, Gilbère J A a,b Van Deelen, Joop c Niemantsverdriet, J W b Thüne, Peter C b

a MATERIALS INNOVATION INSTITUTE M2I (Netherlands)

b EINDHOVEN UNIVERSITY OF TECHNOLOGY (Netherlands)

c TNO (Netherlands)

Author keywords

CVD; Film growth; Nucleation; SEM; TCO; TEM

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; ELECTRONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERFACIAL ENERGY; METHANOL; MORPHOLOGY; NUCLEATION; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SILICON COMPOUNDS; SILICON OXIDES; SUBSTRATES; TIN OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

ATMOSPHERIC PRESSURE CHEMICAL VAPOR DEPOSITION; CHEMICAL VAPOR DEPOSITIONS (CVD); FILM FORMATIONS; FILM MORPHOLOGY; FILM PROPERTIES; GROWTH MODELING; MORPHOLOGY DEVELOPMENT; NUCLEATION BEHAVIOR;

FILM GROWTH;

EID: 84901852164 PISSN: 01694332 EISSN: None Source Type: Journal
DOI: 10.1016/j.apsusc.2014.05.024 Document Type: Article

Times cited : (3)

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