Atomic scale faceting and its effect on the grain size distribution of SnO2 thin films during deposition

Materials Science and Engineering: B

Volumn 110, Issue 3, 2004, Pages 240-242

  Jeong, J ^a   Choi, S P ^a   Hong, K J ^a   O, Y T ^a   Song, H J ^b   Koo, J B ^c   Lee, I H ^d   Park, J S ^a   Shin, D C ^a  

^a Chosun University   (South Korea)

^b Chonnam National University   (South Korea)

^c Samsung SDI   (South Korea)

^d Chonbuk National University   (South Korea)

Author keywords

Abnormal grain growth; Chemical vapor deposition; Faceting; Sensors; Thin films; Tin oxide

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CORRELATION METHODS; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; INTERFACES (MATERIALS); SENSORS; SUPERCONDUCTING TRANSITION TEMPERATURE; THIN FILMS;

ABNORMAL GRAIN GROWTH; FACETING; OPTIMUM DEPOSITION; TIN OXIDE;

TIN COMPOUNDS;

EID: 2942694436     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2004.01.019     Document Type: Article

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