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Volumn 502, Issue 1-2, 2006, Pages 79-87

Preferred orientations in polycrystalline SnO2 films grown by atmospheric pressure chemical vapor deposition

Author keywords

Polycrystalline; SnO2

Indexed keywords

ATOMIC FORCE MICROSCOPY; FILM GROWTH; NUCLEATION; OXIDES; POLYCRYSTALLINE MATERIALS; SEMICONDUCTING GLASS;

EID: 33344468320     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.248     Document Type: Conference Paper
Times cited : (95)

References (21)
  • 2
    • 33344464426 scopus 로고
    • US Patent 4 601
    • D.A. Russo, G.H. Linder, US Patent 4 601 (1986) 917.
    • (1986) , pp. 917
    • Russo, D.A.1    Linder, G.H.2
  • 12
    • 33344460543 scopus 로고
    • U.S. Pat. 4040
    • L. Sargent, M. Ghezzo, U.S. Pat. 4040 (1977) 892.
    • (1977) , pp. 892
    • Sargent, L.1    Ghezzo, M.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.