Crystallographic-orientation-dependent gate-induced drain leakage in nanoscale MOSFETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 9, 2010, Pages 2098-2105

  Pandey, Rajan K ^a   Murali, Kota V R M ^a   Furkay, Stephen S ^b   Oldiges, Philip J ^b   Nowak, Edward J ^b  

^a IBM RESEARCH INDIA   (India)

^b IBM RESEARCH   (United States)

Author keywords

Band to band (BTB) tunneling; complex band structure; gate induced drain leakage (GIDL)

Indexed keywords

BAND-TO-BAND (BTB) TUNNELING; COMPLEX BAND STRUCTURES; DEVICE SIMULATORS; EXPERIMENTAL DATA; GATE-INDUCED DRAIN LEAKAGE; HEAVILY DOPED; LOW POWER; LOW-POWER DEVICES; NANOSCALE MOSFETS; NUMERICAL IMPLEMENTATION; PHYSICAL MODEL; PROCESS OPTIMIZATION; SILICON-BASED CMOS; SIMULATION MODEL;

BAND STRUCTURE; COMPUTER SIMULATION; OPTIMIZATION; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

SEMICONDUCTOR DEVICES;

EID: 77956058450     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2054455     Document Type: Article

References (29)

1. G. L. Timp and R. E. Howard, "Quantum mechanical aspects of transport in nanoelectronics," Proc. IEEE, vol.79, no.8, pp. 1188-1207, Aug. 1991.
2. F. Gilibert, D. Rideau, A. Dray, F. Agut, M. Minmondo, A. Juge, P. Masson, and R. Bouchakour, "Characterization and modeling of gate-induced-drain-leakage," IEICE Trans. Electron., vol.E88-C, no.5, pp. 829-836, 2005.
3. J. Cai and C.-T. Sah, "Gate tunneling currents in ultrathin oxide metal-oxide-silicon transistors," J. Appl. Phys., vol.89, no.4, pp. 2272- 2285, Feb. 2001.
4. P. Gilbert, A. Steegen, D. Coolbaugh, V. Ramachandran, A. Mocuta, T. Hook, M. Angyal, and D. Moy, "Technology elements of a common platform bulk foundry offering," in IEDM Tech. Dig., 2007, pp. 259-262.
5. A. Kerber and E. A. Cartier, "Reliability challenges for CMOS technology qualifications with hafnium oxide/titanium nitride gate stacks," IEEE Trans. Device Mater. Rel., vol.9, no.2, pp. 147-161, Jun. 2009.
6. A. Schenk, "Rigorous theory and simplified model of the band-to-band tunneling in silicon," Solid State Electron., vol.36, no.1, pp. 19-34, Jan. 1993.
7. W. Hansch, C. Fink, J. Schulze, and I. Eisele, "A vertical MOS-gated Esaki tunneling transistor in silicon," Thin Solid Films, vol. 369, no. 1/2, pp. 387-389, Jul. 2000.
8. M. L. Lee and E. A. Fitzgerald, "Strained Si, SiGe, and Ge channels for high-mobility metal-oxide-semiconductor field-effect transistors," J. Appl. Phys., vol.97, no.1, pp. 011 101-1-011 101-28, Jan. 2004.
9. A. K. Ghatak, K. Thyagarajan, and M. R. Shenoy, "A novel numerical technique for solving the one-dimensional Schroedinger equation using matrix approach-Application to quantum well structures," IEEE J. Quantum Electron., vol.24, no.8, pp. 1524-1531, Aug. 1988.
10. A. Rahman, M.S. Lundstrom, and A. W. Ghosh, "Generalized effectivemass approach for n-type metal-oxide-semiconductor field-effect transistors on arbitrary oriented wafers," J. Appl. Phys., vol.97, no.5, pp. 053 702-1-053 702-12, Mar. 2005.
11. T. B. Boykin, "Generalized eigenvalue method for surface and interface states: The complex bands of GaAs and InAs," Phys. Rev. B, Condens. Matter, vol.54, no.11, pp. 8107-8115, Sep. 1996.
12. S. E. Laux, "Computation of complex band structures in bulk and confined structures," in Proc. 13th Int. Workshop Comput. Electron., 2009, pp. 5-8.
13. D. J. BenDaniel and C. B. Duke, "Space-charge effects on electron tunneling," Phys. Rev., vol.152, no.2, pp. 683-692, Dec. 1966.
14. W. A. Harrison, "Tunneling from an independent-particle point of view," Phys. Rev., vol.123, no.1, pp. 85-89, Jul. 1961.
15. A. Smogunov, A. Dal Corso, and E. Tosatti, "Complex band structure with ultrasoft pseudopotentials: fcc Ni and Ni nanowire," Surf. Sci., vol.532-535, pp. 549-555, Jun. 2003.
16. C. Rivas, R. Lake, W. R. Frensley, G. Klimeck, P. E. Thompson, K. D. Hobart, S. L. Rommel, and P. R. Berger, "Full band modeling of the excess current in a delta-doped silicon tunnel diode," J. Appl. Phys., vol.94, no.8, pp. 5005-5013, Oct. 2003.
17. S. Tanaka, "A unified theory of direct and indirect interband tunneling under a nonuniform electric field," Solid State Electron., vol.37, no.8, pp. 1543-1552, Aug. 1994.
18. S. Tanaka, "An indirect interband tunneling formulation for an arbitrary electric field direction in semiconductors," Solid State Electron., vol.38, no.5, pp. 1017-1023, May 1995.
19. M. V. Fischetti, T. P. O'Regan, S. Narayanan, C. Sachs, S. Jin, J. Kim, and Y. Zhang, "Theoretical study of some physical aspects of electronic transport in n-MOSFETs at the 10-nm gate-length," IEEE Trans. Electron Devices, vol.54, no.9, pp. 2116-2136, Sep. 2007.
20. P. M. Solomon, S. E. Laux, L. Shi, J. Cai, andW. Haensch, "Experimental and theoretical explanation for the orientation dependence gate-induced drain leakage in scaled MOSFETs," in Proc. Device Res. Conf., 2009, pp. 263-264.
21. E. M. Buturla, J. B. Johnson, S. S. Furkay, and P. Cottrell, "A new 3D device simulation formulation," in Proc. NASCODE VI: 6th Int. Conf. Numer. Anal. Semicond. Devices Integr. Circuits, Dublin, Ireland, 1989, pp. 291-296.
22. G. A. M. Hurkx, D. B. M. Klaassen, and M. P. G. Knuvers, "A new recombination model for device simulation including tunneling," IEEE Trans. Electron Devices, vol.39, no.2, pp. 331-338, Feb. 1992.
23. P. M. Solomon, J. Jopling, D. J. Frank, C. D'Emic, O. Documaci, P. Ronsheim, and W. E. Haensch, "Universal tunneling behavior in technologically relevant P/N junction diode," J. Appl. Phys., vol.95, no.10, pp. 5800-5812, May 2004.
24. X. Yuan, J.-E. Park, J. Wang, E. Zhao, D. Ahlgren, T. Hook, J. Yuan, V. Chan, H. Shang, C.-H. Liang, R. Lindsay, S. Park, and H. Choo, "Characterization and analysis of gate-induced-drain-leakage current in 45 nm CMOS technology," in Proc. IIRW Final Report, 2007, pp. 70-73.
25. S. A. Mujtaba, R.W. Dutton, and D. L. Scharfetter, "Semi-empirical local NMOS mobility model for 2-D device simulation incorporating screened minority impurity scattering," in Proc. 5th NUPAD, 1994, pp. 3-6.
26. S. A. Mujtaba, S. Takagi, and R. W. Dutton, "Accurate modeling of coulombic scattering, and its impact on scaled MOSFETs," in VLSI Symp. Tech. Dig., 1995, pp. 99-100.
27. S. A. Mujtaba, M. R. Pinto, D. M. Boulin, C. S. Rafferty, and R. W. Dutton, "An accurate NMOS mobility model for 0.25 μm MOSFETs," in Proc. 6th SISDEP, 1995, pp. 424-427.
28. H. Ryssel and P. Pichler, Eds., Simulation of Semiconductor Devices and Processes. Wein, Germany: Springer-Verlag, 1995.
29. E. O. Kane, "Theory of tunneling," J. Appl. Phys., vol.32, no.1, pp. 83- 91, Jan. 1961.