Proposal for Graphene-boron nitride Heterobilayer-based tunnel FET

IEEE Transactions on Nanotechnology

Volumn 12, Issue 5, 2013, Pages 665-667

  Ghosh, Ram Krishna ^a   Mahapatra, Santanu ^a  

^a INDIAN INSTITUTE OF SCIENCE   (India)

Author keywords

Band to band tunneling; complex band structure; graphene; tunnel field effect transistor (TFET)

Indexed keywords

BAND TO BAND TUNNELING; COMPLEX BAND STRUCTURES; INTERLAYER SPACINGS; STACKING ORDER; TUNNEL FET; TUNNEL FIELD EFFECT TRANSISTOR;

BAND STRUCTURE; BORON NITRIDE; GRAPHENE;

FIELD EFFECT TRANSISTORS;

EID: 84883801784     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2013.2272739     Document Type: Article

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