Single and multiple oxygen vacancies in ultrathin SiO2 gate dielectric and their influence on the leakage current: An ab initio investigation

IEEE Electron Device Letters

Volumn 31, Issue 8, 2010, Pages 881-883

  Nadimi, E ^a   Planitz P ^b   Ottking R ^b   Schreiber, M ^a   Radehaus, C ^a  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Density functional theory (DFT); dielectric breakdown; leakage current; MOSFET; nonequilibrium Green's function (NEGF); oxygen vacancy; reliability

Indexed keywords

DIELECTRIC BREAKDOWN; DIELECTRIC BREAKDOWNS; MOS-FET; NON-EQUILIBRIUM GREEN'S FUNCTION; NONEQUILIBRIUM GREEN'S FUNCTION (NEGF);

DENSITY FUNCTIONAL THEORY; ELECTRIC BREAKDOWN; GATE DIELECTRICS; GATES (TRANSISTOR); GREEN'S FUNCTION; LEAKAGE CURRENTS; MOSFET DEVICES; OXYGEN; RELIABILITY THEORY; SILICON COMPOUNDS; VACANCIES;

OXYGEN VACANCIES;

EID: 77955175865     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2051013     Document Type: Article

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