Downscaling limit of equivalent oxide thickness in formation of ultrathin gate dielectric by thermal-enhanced remote plasma nitridation

IEEE Transactions on Electron Devices

Volumn 49, Issue 5, 2002, Pages 840-846

  Chen, Chien Hao ^b   Fang, Yean Kuen ^b   Ting, Shyh Fann ^b   Hsieh, Wen Tse ^b   Yang, Chih Wei ^b   Hsu, Tzu Hsuan ^c   Yu, Mo Chiun ^c   Lee, Tze Liang ^c   Chen, Shih Chang ^a,c   Yu, Chen Hua ^c   Liang, Mong Song ^a,c  

^a IEEE

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

Radical induced re oxidation; Remote plasma nitridation (RPN)

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRIC PROPERTIES; MOSFET DEVICES; NITRIDING; OXIDATION; OXIDES; PHYSICAL PROPERTIES; PLASMA APPLICATIONS; POSITIVE IONS; TRANSCONDUCTANCE;

EQUIVALENT OXIDE THICKNESS; RADICAL-INDUCED REOXIDATION; REMOTE-PLASMA NITRIDATION; SHALLOW TRENCH ISOLATION; ULTRATHIN GATE DIELECTRIC;

DIELECTRIC MATERIALS;

EID: 0036564277     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.998593     Document Type: Article

References (17)

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