Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks

Microelectronics Reliability

Volumn 47, Issue 4-5 SPEC. ISS., 2007, Pages 489-496

  Reimbold, G ^a   Mitard, J ^a,b   Garros, X ^a   Leroux, C ^a   Ghibaudo, G ^c   Martin, F ^a  

^a CEA LETI   (France)

^b STMICROELECTRONICS   (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DRAIN CURRENT; ELECTRON TRAPS; HYSTERESIS; TITANIUM COMPOUNDS; VOLTAGE CONTROL;

HYSTERESIS TRAPS; PBTI DEFECTS; POSITIVE VOLTAGE INSTABILITIES;

TRANSISTORS;

EID: 34247149822     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2007.01.068     Document Type: Article

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