Full-band tunneling in high-κ oxide MOS structures

IEEE Transactions on Electron Devices

Volumn 54, Issue 12, 2007, Pages 3168-3176

  Sacconi, Fabio ^a   Jancu, Jean Marc ^b   Povolotskyi, Michael ^a   Di Carlo, Aldo ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b CNRS   (France)

Author keywords

High oxides; Leakage currents; MOS; MOSFET; Tight binding; Tunneling

Indexed keywords

BAND STRUCTURE; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; OXIDE SUPERCONDUCTORS; QUANTUM THEORY;

TRANSMISSION COEFFICIENTS; TUNNELING CURRENTS;

MOS DEVICES;

EID: 38149121520     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2007.908880     Document Type: Article

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