SCOPUS 정보 검색 플랫폼

Volumn 88, Issue 7, 2011, Pages 1129-1132

Accurate analysis of parasitic current overshoot during forming operation in RRAMs

(9) Tirano, S a,b Perniola, L a Buckley, J a Cluzel, J a Jousseaume, V a Muller, Ch b Deleruyelle, D b De Salvo, B a Reimbold, G a

a CEA LETI (France)

b AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

Current overshoot; Electroforming; Memory operations; Parasitic capacitance; Resistive switching memory

Indexed keywords

CAPACITANCE; ELECTROFORMING; FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; NICKEL OXIDE; RRAM;

ACCURATE ANALYSIS; CURRENT OVERSHOOT; ELECTRICAL PERFORMANCE; MEMORY OPERATIONS; PARASITIC CAPACITANCE; PULSE MEASUREMENTS; RESISTIVE SWITCHING MEMORY; SEMICONDUCTOR PARAMETER ANALYZERS;

MEMORY ARCHITECTURE;

EID: 79958069724 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2011.03.062 Document Type: Conference Paper

Times cited : (34)

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