Roles and effects of TiN and Pt electrodes in resistive-switching HfO 2 systems

Electrochemical and Solid-State Letters

Volumn 14, Issue 6, 2011, Pages

  Goux, L ^a   Wang, X P ^a   Chen, Y Y ^a   Pantisano, L ^a   Jossart, N ^a   Govoreanu, B ^a   Kittl, J A ^a   Jurczak, M ^a   Altimime, L ^a   Wouters, D J ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

INSERT LAYER; NON-POLAR; PHYSICAL MECHANISM; PT ELECTRODE; SWITCHING MODES; SWITCHING PROPERTIES;

ELECTRODES; HAFNIUM COMPOUNDS; OXYGEN; SWITCHING; TITANIUM NITRIDE;

PLATINUM;

EID: 79953783285     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3575165     Document Type: Article

References (16)

1. I.-G. Baek, D. C. Kim, M. J. Lee, H.-J. Kim, E. K. Yim, M. S. Lee, J. E. Lee, S. E. Ahn, S. Seo, J. H. Lee, Tech. Dig.-Int. Electron Devices Meet., 2005, 750.
2. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol., 3, 429 (2008). 10.1038/nnano.2008.160
3. H.-Y. Lee, Y. S. Chen, P. S. Chen, T. Y. Wu, F. Chen, C. C. Wang, P. J. Tzeng, M.-J. Tsai, and C. Lien, IEEE Electron Device Lett., 31, 44 (2010). 10.1109/LED.2009.2034670
4. Y. S. Chen, H. Y. Lee, P. S. Chen, P. Y. Gu, C. W. Chen, W. P. Lin, W. H. Liu, Y. Y. Hsu, S. S. Sheu, P. C. Chiang, Tech. Dig.-Int. Electron Devices Meet., 2009, 105.
5. L. Goux, Y.-Y. Chen, L. Pantisano, X.-P. Wang, G. Groeseneken, M. Jurczak, and D. J. Wouters, Electrochem. Solid-State Lett., 13, G54 (2010). 10.1149/1.3373529
6. N. Xu, L. Liu, X. Sun, X. Liu, D. Han, Y. Wang, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett., 92, 232112 (2008). 10.1063/1.2945278
7. Z. Fang, H. Y. Yu, W. J. Liu, Z. R. Wang, X. A. Tran, B. Gao, and J. F. Kang, IEEE Electron Device Lett., 31, 476 (2010). 10.1109/LED.2010.2041893
8. S.-Y. Wang, D.-Y. Lee, T.-Y. Tseng, and C.-Y. Lin, Appl. Phys. Lett., 95, 112904 (2009). 10.1063/1.3231872
9. C.-Y. Lin, S.-Y. Wang, D.-Y. Lee, and T.-Y. Tseng, J. Electrochem. Soc., 155, H615 (2008). 10.1149/1.2946430
10. H. Y. Lee, P. S. Chen, T. Y. Wu, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, M.-J. Tsai, and C. Lien, Appl. Phys. Lett., 92, 142911 (2008). 10.1063/1.2908928 (Pubitemid 351535634)
11. D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M.-J. Lee, S.-A. Seo, and I. K. Yoo, IEEE Electron Device Lett., 26, 719 (2005). 10.1109/LED.2005.859625 (Pubitemid 41825089)
12. L. Goux, P. Czarnecki, Y. Y. Chen, L. Pantisano, X. P. Wang, R. Degraeve, B. Govoreanu, M. Jurczak, D. J. Wouters, and L. Altimime, Appl. Phys. Lett., 97, 243509 (2010). 10.1063/1.3527086
13. S. Yu, Y. Wu, and H.-S. P. Wong, Appl. Phys. Lett., 98, 103514 (2011). 10.1063/1.3564883
14. S. Yu and H.-S. P. Wong, IEEE Electron Device Lett., 31, 1455 (2010). 10.1109/LED.2010.2078794
15. A. Sawa, Mater. Today, 11, 28 (2008). 10.1016/S1369-7021(08)70119-6 (Pubitemid 351680723)
16. U. Russo, D. Ielmini, C. Cagli, and A. L. Lacaita, IEEE Trans. Electron Devices, 56, 193 (2009). 10.1109/TED.2008.2010584