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Thin Solid Films

Volumn 533, Issue , 2013, Pages 19-23

Role of Ti and Pt electrodes on resistance switching variability of HfO2-based Resistive Random Access Memory

(8) Cabout, T a Buckley, J a Cagli, C a Jousseaume, V a Nodin, J F a De Salvo, B a Bocquet, M b Muller, Ch b

a CEA LETI (France)

b AIX MARSEILLE UNIVERSITÉ (France)

Author keywords

HfO2 switchable layer; Switching memory; Titanium based electrodes; Variability

Indexed keywords

ELECTRICAL PERFORMANCE; HIGH RESISTIVE STATE; RESISTIVE RANDOM ACCESS MEMORY; STATISTICAL DISTRIBUTION; SWITCHABLE; SWITCHING PARAMETERS; TITANIUM-BASED; VARIABILITY;

ELECTRODES; HAFNIUM OXIDES; PLATINUM; SWITCHING; TIN OXIDES; TITANIUM; TITANIUM NITRIDE; TITANIUM OXIDES;

ELECTROLYTIC CAPACITORS;

EID: 84879882868 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/j.tsf.2012.11.050 Document Type: Conference Paper

Times cited : (37)

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