Vacancy cohesion-isolation phase transition upon charge injection and removal in binary oxide-based RRAM filamentary-type switching

IEEE Transactions on Electron Devices

Volumn 60, Issue 10, 2013, Pages 3400-3406

  Kamiya, Katsumasa ^a,b   Yang, Moon Young ^a   Magyari Kope, Blanka ^c   Niwa, Masaaki ^d   Nishi, Yoshio ^d   Shiraishi, Kenji ^a,e  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b KANAGAWA INSTITUTE OF TECHNOLOGY   (Japan)

^c Stanford University   (United States)

^d TOHOKU UNIVERSITY   (Japan)

^e NAGOYA UNIVERSITY   (Japan)

Author keywords

Ab initio modeling; Charge injection and removal; Resistive random access memory (RRAM); Three layer stack structure; Vacancy cohesion isolation phase transition

Indexed keywords

AB INITIO CALCULATIONS; AB INITIO MODELING; MEMORY OPERATIONS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE RANDOM ACCESS MEMORY (RRAM); RESISTIVE SWITCHING; STACK STRUCTURE; VACANCY DIFFUSION;

ADHESION; CALCULATIONS;

RANDOM ACCESS STORAGE;

EID: 84884703793     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2013.2279397     Document Type: Article

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