Silicene on substrates: Interaction mechanism and growth behavior

Journal of Physics: Conference Series

Volumn 491, Issue 1, 2014, Pages

  Liu, H ^a   Gao, J ^a,b   Zhao, J ^a,b  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

^b BEIJING COMPUTATIONAL SCIENCE RESEARCH CENTER   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC PROPERTIES; HONEYCOMB STRUCTURES; MICROELECTRONICS;

CRITICAL ISSUES; GROWTH BEHAVIOR; HONEYCOMB LATTICES; INTERACTION MECHANISMS; METAL SURFACES; MICRO-ELECTRONIC DEVICES; SILICON ATOMS; SUBSTRATE EFFECTS;

SUBSTRATES;

EID: 84896906834     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/491/1/012007     Document Type: Conference Paper

References (72)

1. Takeda K and Shiraishi K 1994 Phys. Rev. B 50 14916-14922
2. Cahangirov S, Topsakal M, Aktürk E, Sahin H and Ciraci S 2009 Phys. Rev. Lett. 102 236804
3. Ding Y and Ni J 2009 Appl. Phys. Lett. 95 083115
4. Pan L, Liu H J, Wen Y W, Tan X J, Lv H Y, Shi J and Tang X F 2011 Phys. Lett. A 375 614-619
5. Sahin H, Cahangirov S, Topsakal M, Bekaroglu E, Akturk E, Senger R and Ciraci S 2009 Phys. Rev. B 80
6. Chen L, Liu C-C, Feng B, He X, Cheng P, Ding Z, Meng S, Yao Y and Wu K 2012 Phys. Rev. Lett. 109 056804
7. Liu C-C, Jiang H and Yao Y 2011 Phys. Rev. B 84 195430
8. Liu C-C, Feng W and Yao Y 2011 Phys. Rev. Lett. 107 076802
9. Voon L C L Y, Sandberg E, Aga R S and Farajian A A 2010 Appl. Phys. Lett. 97 163114
10. Osborn T H, Farajian A A, Pupysheva O V, Aga R S and Lew Yan Voon L C 2011 Chem. Phys. Lett. 511 101-105
11. Houssa M, Scalise E, Sankaran K, Pourtois G, Afanas'ev V V and Stesmans A 2011 Appl. Phys. Lett. 98 223107
12. Ding Y and Wang Y 2012 Appl. Phys. Lett. 100 083102
13. Drummond N D, Zólyomi V and Fal'ko V I 2012 Phys. Rev. B 85 075423
14. Ni Z, Liu Q, Tang K, Zheng J, Zhou J, Qin R, Gao Z, Yu D and Lu J 2012 Nano Lett. 12 113-118
15. Lalmi B, Oughaddou H, Enriquez H, Kara A, Vizzini S, Ealet B and Aufray B 2010 Appl. Phys. Lett. 97 223109
16. Vogt P, De Padova P, Quaresima C, Avila J, Frantzeskakis E, Asensio M C, Resta A, Ealet B and Le Lay G 2012 Phys. Rev. Lett. 108 155501
17. Feng B, Ding Z, Meng S, Yao Y, He X, Cheng P, Chen L and Wu K 2012 Nano Lett. 12 3507-3511
18. Lin C-L, Arafune R, Kawahara K, Tsukahara N, Minamitani E, Kim Y, Takagi N and Kawai M 2012 Appl. Phys. Express 5 045802
19. Jamgotchian H, Colignon Y, Hamzaoui N, Ealet B, Hoarau J Y, Aufray B and Biberian J P 2012 J. Phys.: Condens. Matter 24 172001
20. Chiappe D, Grazianetti C, Tallarida G, Fanciulli M and Molle A 2012 Adv. Mater. 24 5088-5093
21. Gao J and Zhao J 2012 Sci Rep 2 861
22. Fleurence A, Friedlein R, Ozaki T, Kawai H, Wang Y and Yamada-Takamura Y 2012 Phys. Rev. Lett. 108 245501
23. Meng L et al 2013 Nano Lett. 13 685-690
24. Houssa M, Pourtois G, Afanas'ev V V and Stesmans A 2010 Appl. Phys. Lett. 97 112106
25. Liu H, Gao J and Zhao J 2013 J. Phys. Chem. C 117 10353-10359
26. Guo Z-X, Furuya S, Iwata J-i and Oshiyama A 2013 J. Phys. Soc. Japan. 82 063714
27. Lin C-L, Arafune R, Kawahara K, Kanno M, Tsukahara N, Minamitani E, Kim Y, Kawai M and Takagi N 2013 Phys. Rev. Lett. 110 076801
28. Wang Y-P and Cheng H-P 2013 Phys. Rev. B 87 245430
29. Cahangirov S, Audiffred M, Tang P, Iacomino A, Duan W, Merino G and Rubio A 2013 Phys. Rev. B 88 035432
30. Avila J et al 2013 J. Phys.: Condens. Matter 25 262001
31. Gao J, Zhang J, Liu H, Zhang Q and Zhao J 2013 Nanoscale 5 9785-9792
32. Enriquez H, Vizzini S, Kara A, Lalmi B and Oughaddou H 2012 J. Phys.: Condens. Matter 24 314211
33. Resta A, Leoni T, Barth C, Ranguis A, Becker C, Bruhn T, Vogt P and Lay G 2013 Sci Rep 3 2399
34. Bhattacharya A, Bhattacharya S and Das G 2013 Appl. Phys. Lett. 103 123113
35. Novoselov K S, Geim A K, Morozov S V, Jiang D, Zhang Y, Dubonos S V, Grigorieva I V and Firsov A A 2004 Science 306 666-669
36. Berger C et al 2006 Science 312 1191-1196
37. Novoselov K S, Geim A K, Morozov S V, Jiang D, Katsnelson M I, Grigorieva I V, Dubonos S V and Firsov A A 2005 Nature 438 197-200
38. Knox K R, Wang S, Morgante A, Cvetko D, Locatelli A, Mentes T O, Niño M A, Kim P and Osgood R M 2008 Phys. Rev. B 78 201408
39. Castro Neto A H, Guinea F, Peres N M R, Novoselov K S and Geim A K 2009 Rev. Mod. Phys. 81 109-162
40. Novoselov K S, Jiang D, Schedin F, Booth T J, Khotkevich V V, Morozov S V and Geim A K 2005 Proc. Natl. Acad. Sci. U. S A 102 10451-10453
41. Pei S and Cheng H-M 2012 Carbon 50 3210-3228
42. Léandri C, Oughaddou H, Aufray B, Gay J M, Le Lay G, Ranguis A and Garreau Y 2007 Surf. Sci. 601 262-267
43. Aufray B, Kara A, Vizzini S b, Oughaddou H, Léandri C, Ealet B and Le Lay G 2010 Appl. Phys. Lett. 96 183102
44. De Padova P et al 2010 Appl. Phys. Lett. 96 261905
45. De Padova P, Quaresima C, Olivieri B, Perfetti P and Le Lay G 2011 J. Phys. D: Appl. Phys. 44 312001
46. Vogt P, De Padova P, Quaresima C, Avila J, Frantzeskakis E, Asensio M C, Resta A, Ealet B and Le Lay G 2012 Phys. Rev. Lett. 108
47. Kara A, Enriquez H, Seitsonen A P, Lew Yan Voon L C, Vizzini S, Aufray B and Oughaddou H 2012 Surf. Sci. Rep. 67 1-18
48. Ivanovskii A L 2012 Russ. Chem. Rev. 81 571-605
49. Xu M, Liang T, Shi M and Chen H 2013 Chem. Rev. 113 3766-3798
50. Yu-Ming L, Hsin-Ying C, Jenkins K A, Farmer D B, Avouris P and Valdes-Garcia A 2010 Electron Device Lett., IEEE 31 68-70
51. Lemme M C, Echtermeyer T J, Baus M and Kurz H 2007 Electron Device Lett., IEEE 28 282-284
52. Lin Y-M, Jenkins K A, Valdes-Garcia A, Small J P, Farmer D B and Avouris P 2008 Nano Lett. 9 422-426
53. Farmer D B, Chiu H-Y, Lin Y-M, Jenkins K A, Xia F and Avouris P 2009 Nano Lett. 9 4474-4478
54. Lin Y-M, Dimitrakopoulos C, Jenkins K A, Farmer D B, Chiu H-Y, Grill A and Avouris P 2010 Science 327 662
55. Moon J S et al 2009 Electron Device Lett., IEEE 30 650-652
56. Kedzierski J, Pei-Lan H, Healey P, Wyatt P W, Keast C L, Sprinkle M, Berger C and De Heer W A 2008 Electron Devices, IEEE Trans. on 55 2078-2085
57. Gannett W, Regan W, Watanabe K, Taniguchi T, Crommie M F and Zettl A 2011 Appl. Phys. Lett. 98 242105
58. Dean C R et al 2010 Nat. Nanotechnol. 5 722-726
59. RadisavljevicB, RadenovicA, BrivioJ, GiacomettiV and KisA 2011 Nat. Nanotechnol. 6 147-150
60. Ghatak S, Pal A N and Ghosh A 2011 ACS Nano 5 7707-7712
61. Qiu H, Pan L, Yao Z, Li J, Shi Y and Wang X 2012 Appl. Phys. Lett. 100 123104
62. Matsui T, Kambara H, Niimi Y, Tagami K, Tsukada M and Fukuyama H 2005 Phys. Rev. Lett. 94 226403
63. Niimi Y, Kambara H, Matsui T, Yoshioka D and Fukuyama H 2006 Phys. Rev. Lett. 97 236804
64. Li G and Andrei E Y 2007 Nat. Phys. 3 623-627
65. Miller D L, Kubista K D, Rutter G M, Ruan M, de Heer W A, First P N and Stroscio J A 2009 Science 324 924-927
66. Li G, Luican A and Andrei E Y 2009 Phys. Rev. Lett. 102 176804
67. Gao J, Yip J, Zhao J, Yakobson B I and Ding F 2011 J. Am. Chem. Soc. 133 5009-5015
68. Gao J, Yuan Q, Hu H, Zhao J and Ding F 2011 J. Phys. Chem. C 115 17695-17703
69. Gao J and Zhao J 2013 Eur. Phys. J. D 67 1-9
70. Zhu X and Zeng X C 2003 J. Chem. Phys. 118 3558-3570
71. Zhu X L, Zeng X C, Lei Y A and Pan B 2004 J. Chem. Phys. 120 8985-8995
72. Yoo S and Zeng X C 2006 J. Chem. Phys. 124 054304-054306