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Volumn 82, Issue 6, 2013, Pages

Absence of dirac electrons in silicene on Ag(111) surfaces

Author keywords

Ag(111); Dirac electrons; First principles calculation; Silicene

Indexed keywords


EID: 84878954751     PISSN: 00319015     EISSN: 13474073     Source Type: Journal    
DOI: 10.7566/JPSJ.82.063714     Document Type: Article
Times cited : (85)

References (32)
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    • We have performed the calculations for the silicene on Ag(111) with the 4 × 4 periodicity and for the silicene/H-covered Si(111) (see text) with the generalized gradient approximation
    • We have performed the calculations for the silicene on Ag(111) with the 4 × 4 periodicity and for the silicene/H-covered Si(111) (see text) with the generalized gradient approximation [Perdew et al.: Phys. Rev. Lett. 77 (1996) 3865].
    • (1996) Phys. Rev. Lett. , vol.77 , pp. 3865
    • Perdew1
  • 25
    • 79960645403 scopus 로고    scopus 로고
    • with the van-der-Waals-corrected functionals [optB86b-vdW as in, as is implemented in VASP.24) The obtained structures are same with the LDA structures with the difference of several % and the energy bands are essentially identical to the LDA bands. The mixed (π*) states appear at 1.0 eV below EF in the optB86b-vdW for the silicene on the 4×4 Ag(111)
    • with the van-der-Waals-corrected functionals [optB86b-vdW as in Klimes et al.: Phys. Rev. B 83 (2011) 195131] as is implemented in VASP.24) The obtained structures are same with the LDA structures with the difference of several % and the energy bands are essentially identical to the LDA bands. The mixed (π*) states appear at 1.0 eV below EF in the optB86b-vdW for the silicene on the 4×4 Ag(111).
    • (2011) Phys. Rev. B , vol.83 , pp. 195131
    • Klimes1
  • 28
    • 84878920775 scopus 로고    scopus 로고
    • -1in all the calculations
    • -1in all the calculations.
  • 29
    • 33744607543 scopus 로고
    • STM images are obtained by the following scheme, The images are insensitive to the bias voltage
    • STM images are obtained by the following scheme: J. Tersoff and D. R. Hamann: Phys. Rev. B 31 (1985) 805. The images are insensitive to the bias voltage.
    • (1985) Phys. Rev. B , vol.31 , pp. 805
    • Tersoff, J.1    Hamann, D.R.2
  • 30
    • 84878942561 scopus 로고    scopus 로고
    • Supplemental material) Energy bands of the peeled silicene from the Ag substrate with and without hydrogen atoms are shown online
    • (Supplemental material) Energy bands of the peeled silicene from the Ag substrate with and without hydrogen atoms are shown online.
  • 31
    • 84855800482 scopus 로고    scopus 로고
    • 2, In this work, we focus on the stability of silicene on multilayer h-BN substrate with AÁ stacking. We have considered the effect of lattice mismatching as well as adsorption configurations of silicene on h-BN. The results shown in the text are obtained based on the most stable configuration with the lattice mismatch of 0.64%
    • 2 [Z. Ni et al.: Nano Lett. 12 (2012) 113]. In this work, we focus on the stability of silicene on multilayer h-BN substrate with AÁ stacking. We have considered the effect of lattice mismatching as well as adsorption configurations of silicene on h-BN. The results shown in the text are obtained based on the most stable configuration with the lattice mismatch of 0.64%.
    • (2012) Nano Lett. , vol.12 , pp. 113
    • Ni, Z.1
  • 32
    • 84878909051 scopus 로고    scopus 로고
    • We have also examined possibilities that a Si atom in the silicene layer is incorporated into the subsurface layer and found that the incorporation is endothermic
    • We have also examined possibilities that a Si atom in the silicene layer is incorporated into the subsurface layer and found that the incorporation is endothermic.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.