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Nanoscale

Volumn 5, Issue 20, 2013, Pages 9785-9792

Structures, mobilities, electronic and magnetic properties of point defects in silicene

(5) Gao, Junfeng a,b Zhang, Junfeng a Liu, Hongsheng a Zhang, Qinfang c Zhao, Jijun a

a DALIAN UNIVERSITY OF TECHNOLOGY (China)

b BEIJING COMPUTATIONAL SCIENCE RESEARCH CENTER (China)

c YANCHENG INSTITUTE OF TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AB INITIO CALCULATIONS; ELECTRONIC AND MAGNETIC PROPERTIES; FORMATION ENERGIES; SILICENE; SMALL GAPS; STONE-WALES DEFECTS; STRUCTURAL DEFECT; THERMAL-ANNEALING;

DEFECTS; ELECTRONIC PROPERTIES; MAGNETIC SEMICONDUCTORS; POINT DEFECTS;

ADATOMS;

EID: 84884881537 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr02826g Document Type: Article

Times cited : (253)

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