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We thank A. MacDonald, H. Min, M. Stiles, and the NIST graphene team for valuable comments and discussions and C.Berger,N.Sharma,M.Sprinkle,S. Blankenship, A. Band, and F. Hess for their technical contributions to this work. Portions of this work were supported by NSF (grant ECCS-0804908, the Semiconductor Research Corporation Nanoelectronics Research Initiative INDEX program, and the W. M. Keck Foundation. Graphene production facilities were developed under NSF grant ECCS-0521041
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We thank A. MacDonald, H. Min, M. Stiles, and the NIST graphene team for valuable comments and discussions and C.Berger,N.Sharma,M.Sprinkle,S. Blankenship, A. Band, and F. Hess for their technical contributions to this work. Portions of this work were supported by NSF (grant ECCS-0804908), the Semiconductor Research Corporation Nanoelectronics Research Initiative (INDEX program), and the W. M. Keck Foundation. Graphene production facilities were developed under NSF grant ECCS-0521041.
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