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Volumn 14, Issue 3, 2014, Pages 1643-1650

Mobility enhancement by Sb-mediated minimisation of stacking fault density in InAs nanowires grown on silicon

Author keywords

crystal structure; InAs nanowires; InAsSb; mobility; molecular beam epitaxy; self catalyzed

Indexed keywords

CARRIER MOBILITY; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SILICON;

EID: 84896326719     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl5001554     Document Type: Article
Times cited : (84)

References (52)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.