Self-catalyzed epitaxial growth of vertical indium phosphide nanowires on silicon

Nano Letters

Volumn 9, Issue 6, 2009, Pages 2223-2228

  Gao, Li ^a   Woo, Robyn L ^a   Liang, Baolai ^a   Pozuelo, Marta ^a   Prikhodko, Sergey ^a   Jackson, Mike ^a   Goel, Niti ^b   Hudait, Mantu K ^b   Huffaker, Diana L ^a   Goorsky, Mark S ^a   Kodambaka, Suneel ^a   Hicks, Robert F ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-DENSITY; GROWTH DIRECTIONS; HIGH DENSITY; IN-SITU; INDIUM PHOSPHIDE NANOWIRES; LIQUID INDIUM; METAL-ORGANIC VAPOR PHASE EPITAXY; ROOM TEMPERATURE PHOTOLUMINESCENCE SPECTRA; SELF-CATALYZED; SILICON (111); ZINC BLENDE;

CRYSTAL GROWTH; ELECTRIC WIRE; HETEROJUNCTION BIPOLAR TRANSISTORS; INDIUM; INDIUM PHOSPHIDE; NANOWIRES; SEMICONDUCTING SILICON COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; ZINC;

EPITAXIAL GROWTH;

INDIUM; INDIUM PHOSPHIDE; NANOWIRE; PHOSPHINE DERIVATIVE; SILICON;

ARTICLE; CATALYSIS; CHEMISTRY; TRANSMISSION ELECTRON MICROSCOPY; ULTRASTRUCTURE; X RAY DIFFRACTION;

CATALYSIS; INDIUM; MICROSCOPY, ELECTRON, TRANSMISSION; NANOWIRES; PHOSPHINES; SILICON; X-RAY DIFFRACTION;

EID: 66749180500     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl803567v     Document Type: Article

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