InAs1-xPx nanowires grown by catalyst-free molecular-beam epitaxy

Nanotechnology

Volumn 24, Issue 8, 2013, Pages

  Isakov, I ^a   Panfilova, M ^a   Sourribes, M J L ^a   Tileli, V ^b   Porter, A E ^b   Warburton, P A ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST-FREE; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GROWTH CHAMBER; INAS; INCORPORATION RATES; PHOSPHORUS CONTENTS; PHOSPHORUS INCORPORATION; SELF-CATALYSED GROWTH; SI(111) SUBSTRATE; SOLID-SOURCE MOLECULAR BEAM EPITAXY; WURTZITES; X-RAY DIFFRACTION MEASUREMENTS; ZINCBLENDE STRUCTURES;

EPITAXIAL GROWTH; INDIUM ARSENIDE; MOLECULAR BEAMS; PHOSPHORUS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION; X RAY SPECTROSCOPY; ZINC SULFIDE;

NANOWIRES;

EID: 84873424536     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/8/085707     Document Type: Article

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