Self-catalyzed GaAsP nanowires grown on silicon substrates by solid-source molecular beam epitaxy

Nano Letters

Volumn 13, Issue 8, 2013, Pages 3897-3902

  Zhang, Yunyan ^a   Aagesen, Martin ^b,c   Holm, Jeppe V ^b   Jørgensen, Henrik I ^b   Wu, Jiang ^a   Liu, Huiyun ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

^b SunFlake AS   (Denmark)

^c PhotoSolar ApS   (Denmark)

Author keywords

core shell; GaAsP; Nanowire; room temperature emission; self catalyzed; solid source molecular beam epitaxy

Indexed keywords

CORE-SHELL; GAASP; ROOM-TEMPERATURE EMISSIONS; SELF-CATALYZED; SOLID SOURCE MOLECULAR BEAM EPITAXY;

CATALYSIS; EPITAXIAL GROWTH; FILM GROWTH; MOLECULAR BEAM EPITAXY; NUCLEATION; SILICON; VAPORS; ZINC SULFIDE;

NANOWIRES;

EID: 84881602957     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl401981u     Document Type: Article

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