Self-induced growth of vertical free-standing InAs nanowires on Si(111) by molecular beam epitaxy

Nanotechnology

Volumn 21, Issue 36, 2010, Pages

  Koblmuller G ^a   Hertenberger, S ^a   Vizbaras, K ^a   Bichler, M ^a   Bao, F ^b   Zhang, J P ^b   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE-SHIFTED; EMISSION WAVELENGTH; HIGH RESOLUTION X RAY DIFFRACTION; INAS; NANOWIRE GROWTH; PEAK EMISSIONS; PURE ZINC; QUANTUM CONFINEMENT EFFECTS; SELF-INDUCED GROWTH; SI (1 1 1); SI(111) SUBSTRATE; SIZE VARIATION; SOLID SOURCE MOLECULAR BEAM EPITAXY; STRUCTURAL QUALITIES; ULTRA-THIN; VERTICALLY ALIGNED; WELL-ALIGNED;

ASPECT RATIO; CRYSTAL STRUCTURE; EPITAXIAL GROWTH; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; PHOTOLUMINESCENCE SPECTROSCOPY; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SILICON; STACKING FAULTS; X RAY DIFFRACTION;

INDIUM ARSENIDE;

EID: 77957839619     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/36/365602     Document Type: Article

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