Modeling of InAsInSb nanowires grown by Au-assisted chemical beam epitaxy

Nanotechnology

Volumn 23, Issue 9, 2012, Pages

  Lugani, L ^a,d   Ercolani, D ^a   Sorba, L ^a   Sibirev, N V ^b   Timofeeva, M A ^b   Dubrovskii, V G ^b,c  

^a SCUOLA NORMALE SUPERIORE   (Italy)

^b ST PETERSBURG ACADEMIC UNIVERSITY   (Russian Federation)

^c IOFFE INSTITUTE   (Russian Federation)

^d EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

ANGULAR ROTATIONS; DEPOSITION CONDITIONS; EXPERIMENTAL DATA; GIBBS-THOMSON; INAS; INSB NANOWIRE; KINETIC COEFFICIENT; MATERIAL FLUXES; NANOWIRE HETEROSTRUCTURES; PURE ZINC; STEM FORM; THEORETICAL MODELS; WURTZITE PHASE; WURTZITES; ZINC BLENDE;

CHEMICAL BEAM EPITAXY; EPITAXIAL GROWTH; INDIUM ANTIMONIDES; INDIUM ARSENIDE; SURFACE CHEMISTRY; ZINC; ZINC SULFIDE;

NANOWIRES;

GOLD; INDIUM; INDIUM ARSENIDE; NANOMATERIAL; ORGANOARSENIC DERIVATIVE;

ARTICLE; CHEMICAL MODEL; CHEMICAL STRUCTURE; CHEMISTRY; COMPUTER SIMULATION; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; PARTICLE SIZE; RADIATION EXPOSURE; SURFACE PROPERTY; ULTRASTRUCTURE;

ARSENICALS; COMPUTER SIMULATION; CRYSTALLIZATION; GOLD; INDIUM; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MODELS, CHEMICAL; MODELS, MOLECULAR; MOLECULAR CONFORMATION; NANOSTRUCTURES; NANOTECHNOLOGY; PARTICLE SIZE; SURFACE PROPERTIES;

EID: 84857240712     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/9/095602     Document Type: Article

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