Atomic layer deposition of Y 2 O 3 and yttrium-doped HfO 2 using a newly synthesized Y(iPrCp) 2 (N-iPr-amd) precursor for a high permittivity gate dielectric

Applied Surface Science

Volumn 297, Issue , 2014, Pages 16-21

  Lee, Jae Seung ^a   Kim, Woo Hee ^b   Oh, Il Kwon ^a   Kim, Min Kyu ^a   Lee, Gyeongho ^a   Lee, Chang Wan ^a   Park, Jusang ^a   Lansalot Matras, Clement ^c   Noh, Wontae ^c   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b Stanford University   (United States)

^c AIR LIQUIDE   (France)

Author keywords

ALD; Atomic layer deposition; Dielectric constant; Gate oxide; High k; Leakage current; Precursor; Rare earth; Yttrium

Indexed keywords

ANNEALING; ATOMS; DIELECTRIC PROPERTIES; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH-K DIELECTRIC; LEAKAGE (FLUID); LEAKAGE CURRENTS; OXYGEN VACANCIES; PERMITTIVITY; PHASE TRANSITIONS; PRASEODYMIUM COMPOUNDS; RARE EARTHS; SEMICONDUCTOR DOPING; YTTRIUM;

ELECTRICAL CHARACTERIZATION; GATE OXIDE; HIGH- K; HIGH-PERMITTIVITY GATE DIELECTRICS; INDUCED PHASE TRANSFORMATION; PRECURSOR; RELATIVE DIELECTRIC CONSTANT; STRUCTURAL PHASE TRANSFORMATIONS;

ATOMIC LAYER DEPOSITION;

EID: 84894624959     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2014.01.032     Document Type: Article

References (25)

1. 3 stacked gate dielectric with TiN metal gate electrode Thin Solid Films 521 2012 42 44
2. J. Robertson High dielectric constant gate oxides for metal oxide Si transistors Rep. Prog. Phys. 69 2006 327 396
3. 2 layer Appl. Phys. Lett. 96 2010 082905
4. 2 Thin Solid Films 486 2005 125 128
5. 2 from first principles Appl. Phys. Lett. 92 2008 012908
6. 2 through structural phase transformation Appl. Phys. Lett. 86 2005 102906 102913
7. P.R. Chalker, M. Werner, S. Romani, R.J. Potter, K. Black, H.C. Aspinall, A.C. Jones, C.Z. Zhao, S. Taylor, and P.N. Heys Permittivity enhancement of hafnium dioxide high-k films by cerium doping Appl. Phys. Lett. 93 2008 182911 182913
8. 2 admixture enabling thermally stable metal-insulator-metal capacitors Appl. Phys. Lett. 91 2007 072902
9. 3 Appl. Phys. Lett. 89 2006 192905
10. 2 gate oxides Appl. Phys. Lett. 92 2008 202906
11. S. Govindarajan, T. S. Böscke, P., Sivasubramani, P. D. Kirsch, B. H. Lee, H.-H. Tseng, R., Jammy, U. Schröder, S. Ramanathan, and B. E. Gnade, Higher permittivity rare earth doped HfO2 for sub-45-nm metal-insulator-semiconductor devices, Appl. Phys. Lett., 91, 062906.
12. C. Adelmann, V. Sriramkumar, S. Van Elshocht, P. Lehnen, T. Conard, and S. De Gendt Dielectric properties of dysprosium- and scandium-doped hafnium dioxide thin films Appl. Phys. Lett. 91 2007 162902
13. 2 by Y addition in films grown by metal organic chemical vapor deposition Appl. Phys. Lett. 89 2006 012902
14. 2 J. Appl. Phys. 104 2008 074101
15. P. Duwez, F.H. Brown, and F. Odell Jr. The zirconia-yttria system J. Electrochem. Soc. 98 1951 356
16. W.-H. Kim, M.-K. Kim, W.J. Maeng, J. Gatineau, V. Pallem, C. Dussarrat, A. Noori, D. Thompson, S. Chu, and H. Kim Growth characteristics and film properties of cerium dioxide prepared by plasma-enhanced atomic layer deposition J. Electrochem. Soc. 158 8 2011 G169 G172
17. W.-H. Kim, W.J. Maeng, M.-K. Kim, J. Gatineau, and H. Kim Electronic structure of cerium oxide gate dielectric grown by plasma-enhanced atomic layer deposition J. Electrochem. Soc. 158 10 2011 G217 G220
18. 2 films Electrochem. Solid-State Lett. 12 1 2009 G1 G4
19. 2 films grown on Si using atomic layer deposition J. Appl. Phys. 105 2009 104 106
20. 3 thin films by atomic layer deposition from cyclopentadienyl-type compounds and water as precursors Chem. Mater. 16 2004 2953 2958
21. 3 films on silicon using tris(ethylcyclopentadienyl) yttrium precursor and water vapor J. Electrochem. Soc. 155 8 2008 G152 G158
22. 3 gate oxides grown by thermal and plasma-enhanced atomic layer deposition Thin Solid Films 519 2010 362 366
23. 3 films from yttrium tris(N,N′- diisopropylacetamidinate) and water Chem. Mater. 17 2005 4808 4814
24. 2 thin films J. Electrochem. Soc. 157 4 2010 G105 G110
25. P.S. Winokur, J.R. Schwank, P.J. McWhorter, P.V. Dressendorfer, and D.C. Turpin Correlating the radiation response of MOS capacitors and transistors IEEE. Nucl. Sci. 31 6 1984 1453 1460