The electrical and structural properties of HfO 2/SrTiO 3 stacked gate dielectric with TiN metal gate electrode

Thin Solid Films

Volumn 521, Issue , 2012, Pages 42-44

  Choi, Changhwan ^a   Choi, Rino ^b  

^a Hanyang University   (South Korea)

^b Inha University   (South Korea)

Author keywords

Equivalent oxide thickness; HfO 2; N channel transistor; SrTiO 3

Indexed keywords

ATOMIC LAYER DEPOSITED; ELECTRICAL AND STRUCTURAL PROPERTIES; EQUIVALENT OXIDE THICKNESS; GATE-LEAKAGE CURRENT; HIGH-K GATE INSULATOR; INTERFACIAL LAYER; METAL-OXIDE-SEMICONDUCTOR TRANSISTOR; N-CHANNEL TRANSISTORS; NEGATIVE V; SCALING DOWN; SI SUBSTRATES; SRTIO; TIN METAL GATE;

EID: 84867042724     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2012.03.075     Document Type: Conference Paper

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