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Journal of Alloys and Compounds

Volumn 593, Issue , 2014, Pages 190-195

Electrical characteristics of β-Ga2O3 thin films grown by PEALD

(4) Altuntas, Halit a Donmez, Inci b Ozgit Akgun, Cagla b Biyikli, Necmi b

a CANKIRI KARATEKIN UNIVERSITY (Turkey)

b BILKENT UNIVERSITY (Turkey)

Author keywords

Al Ga2O3 p Si; Interface states; Metal oxide semiconductor; PEALD

Indexed keywords

CAPACITANCE VOLTAGE MEASUREMENTS; ENERGY DENSITY DISTRIBUTIONS; GRAZING-INCIDENCE X-RAY DIFFRACTION; METAL OXIDE SEMICONDUCTOR; PEALD; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SCHOTTKY BARRIER DIODES (SBDS); STRUCTURE AND MICROSTRUCTURES;

ANNEALING; ATOMIC LAYER DEPOSITION; DIELECTRIC DEVICES; ELECTRIC PROPERTIES; ELECTRIC RESISTANCE; INTERFACE STATES; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MICROSTRUCTURE; MOS DEVICES; SCHOTTKY BARRIER DIODES; SILICON; SILICON WAFERS; THIN FILMS; X RAY DIFFRACTION;

DEPOSITION;

EID: 84893306654 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2014.01.029 Document Type: Article

Times cited : (54)

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