Growth temperature dependence of Ga2O3 thin films deposited by plasma enhanced atomic layer deposition

Integrated Ferroelectrics

Volumn 94, Issue 1, 2007, Pages 11-20

  Liu, G X ^a,b   Shan, F K ^a,b   Lee, W J ^b   Shin, B C ^b   Kim, S C ^b   Kim, H S ^c   Cho, C R ^d  

^a QINGDAO UNIVERSITY   (China)

^b Dong Eui University   (South Korea)

^c Korea Maritime University   (South Korea)

^d Pusan National University   (South Korea)

Author keywords

AFM; Electrical properties; Gallium oxide; Thin film; Transmittance; XRD

Indexed keywords

EID: 71149094905     PISSN: 10584587     EISSN: 16078489     Source Type: Journal    
DOI: 10.1080/10584580701755716     Document Type: Conference Paper

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