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Volumn 80, Issue 1, 2006, Pages 197-206
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Ga2O3 thin film deposited by atomic layer deposition with high plasma power
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Author keywords
Gallium oxide; Plasma enhanced atomic layer deposition (PEALD); Refractive index; Spectroscopic ellipsometry
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Indexed keywords
ANNEALING;
ATOMIC FORCE MICROSCOPY;
DEPOSITION;
DIFFRACTOMETERS;
ELECTRIC PROPERTIES;
ELLIPSOMETRY;
HIGH TEMPERATURE EFFECTS;
INSULATION;
MORPHOLOGY;
PLASMA APPLICATIONS;
SPECTROSCOPIC ANALYSIS;
THIN FILMS;
X RAY APPARATUS;
GALLIUM OXIDE;
PLASMA ENHANCED ATOMIC LAYER DEPOSITION (PEALD);
PLASMA POWER;
SPECTROSCOPIC ELLIPSOMETRY;
GALLIUM COMPOUNDS;
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EID: 33745756073
PISSN: 10584587
EISSN: 16078489
Source Type: Conference Proceeding
DOI: 10.1080/10584580600657666 Document Type: Article |
Times cited : (23)
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References (11)
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