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Volumn 80, Issue 1, 2006, Pages 197-206

Ga2O3 thin film deposited by atomic layer deposition with high plasma power

Author keywords

Gallium oxide; Plasma enhanced atomic layer deposition (PEALD); Refractive index; Spectroscopic ellipsometry

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; DEPOSITION; DIFFRACTOMETERS; ELECTRIC PROPERTIES; ELLIPSOMETRY; HIGH TEMPERATURE EFFECTS; INSULATION; MORPHOLOGY; PLASMA APPLICATIONS; SPECTROSCOPIC ANALYSIS; THIN FILMS; X RAY APPARATUS;

EID: 33745756073     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600657666     Document Type: Article
Times cited : (23)

References (11)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.