Growth of Ga2O3 thin films on Si(100) substrates using a trimethylgallium and oxygen mixture

Journal of Materials Science

Volumn 39, Issue 10, 2004, Pages 3461-3463

  Kim, Hyoun Woo ^a   Kim, Nam Ho ^a   Lee, Chongmu ^a  

^a Inha University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTALLIZATION; EVAPORATION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC SOLVENTS; OXYGEN; SCANNING ELECTRON MICROSCOPY; SILICON; SUBSTRATES; SURFACE ROUGHNESS; SYNTHESIS (CHEMICAL); THIN FILMS; X RAY DIFFRACTION;

CRYSTALLINITY; FLOW RATES; ROOT MEAN SQUARE (RMS) ROUGHNESS; TRIMETHYLGALLIUM;

GALLIUM COMPOUNDS;

EID: 3543104258     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/B:JMSC.0000026951.53297.e8     Document Type: Article

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