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Volumn 13, Issue 8, 2013, Pages 1604-1610
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Effect of annealing on the electronic parameters of Au/ poly(ethylmethacrylate)/n-InP Schottky diode with organic interlayer
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Author keywords
Au PEMA n InP Schottky diode; I V and C V characteristics; Interface state density; Series resistance
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Indexed keywords
CAPACITANCE VOLTAGE MEASUREMENTS;
EFFECTIVE BARRIER HEIGHTS;
ELECTRONIC MODIFICATIONS;
I-V AND C-V CHARACTERISTICS;
INTERFACE STATE DENSITY;
POLY-(ETHYLMETHACRYLATE);
SCHOTTKY DIODES;
SERIES RESISTANCES;
ELECTRIC PROPERTIES;
ELECTRIC RESISTANCE;
GOLD;
INTERFACE STATES;
SCHOTTKY BARRIER DIODES;
ANNEALING;
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EID: 84880532272
PISSN: 15671739
EISSN: None
Source Type: Journal
DOI: 10.1016/j.cap.2013.06.001 Document Type: Article |
Times cited : (38)
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References (57)
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