Current-voltage characteristics of Al/Rhodamine-101/n-GaAs and Cu/Rhodamine-101/n-GaAs rectifier contacts

Synthetic Metals

Volumn 157, Issue 18-20, 2007, Pages 679-683

  Vural, Ö ^a   Yildirim, N ^b   Altindal, Ş ^c   Turut A ^b  

^a KAFKAS UNIVERSITY   (Turkey)

^b ATATÜRK UNIVERSITY   (Turkey)

^c GAZI UNIVERSITY   (Turkey)

Author keywords

Hetero junction; Organic semiconductor inorganic semiconductor contacts; Rectification; Schottky barrier height; Schottky contacts

Indexed keywords

ALUMINUM; BIAS CURRENTS; CONCENTRATION (PROCESS); CURRENT VOLTAGE CHARACTERISTICS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE;

INORGANIC SEMICONDUCTOR; RECTIFICATION; SCHOTTKY BARRIER HEIGHT; SCHOTTKY CONTACTS;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 35748977573     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2007.06.013     Document Type: Article

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