Influence of oxygen content of room temperature TiO2-x deposited films for enhanced resistive switching memory performance

Journal of Applied Physics

Volumn 115, Issue 3, 2014, Pages

  Bousoulas, P ^a   Michelakaki, I ^a   Tsoukalas, D ^a  

^a NATIONAL TECHNICAL UNIVERSITY OF ATHENS   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLIANCE CONTROL; DEPOSITION; ELECTROFORMING; HIGH-K DIELECTRIC; OXIDE MINERALS; RANDOM ACCESS STORAGE; SWITCHING; TITANIUM DIOXIDE;

CONDUCTING FILAMENT; CONDUCTION MECHANISM; INFLUENCE OF OXYGEN; POOLE-FRENKEL EMISSION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING MEMORY; SWITCHING PHENOMENON; TRAP ASSISTED TUNNELING;

OXYGEN VACANCIES;

EID: 84893302912     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4862797     Document Type: Article

References (49)

1. G. W. Bur, B. N. Kurdi, J. C. Scott et al., "Overview of candidate device technologies for storage-class memory," IBM J. Res. Dev. 52 (4/5), 449-464 (2008). 10.1147/rd.524.0449
2. S. Lai, "Non-volatile memory technologies: The quest for ever lower cost," in Proceedings of the International Electron Devices Meeting-IEDM (2008), pp. 121-126.
3. T.-C. Chang, F.-Y. Jiana, S.-C. Chen, and Y.-T. Tsai, "Developments in nanocrystal memory," Mater. Today 14 (12), 608 (2011). 10.1016/S1369-7021(11)70302-9
4. x interface," Nanoscale Res. Lett. 7, 345 (2012). 10.1186/1556-276X-7-345
5. K. Tsunoda, K. Kinoshita, H. Noshiro et al., "Low power and high speed switching of Ti-doped NiO ReRAM under the unipolar voltage source of less than 3V," in IEEE International Electron Devices Meeting, Washington DC (2007), pp. 767-770.
6. N. Xu, L. F. Liu, X. Sun et al., "Characteristics and mechanism of conduction/set process in TiN/ZnO/Pt resistance switching random-access memories," Appl. Phys. Lett. 92 (23), 232112 (2008). 10.1063/1.2945278
7. L. Liu, B. Chen, B. Gao et al., "Engineering oxide resistive switching materials for memristive device application," Appl. Phys. A 102, 991-996 (2011). 10.1007/s00339-011-6331-2
8. T. Prodromakis, C. Toumazou, and L. O. Chua, "Two centuries of memristors," Nature Mater. 11, 478 (2012). 10.1038/nmat3338
9. D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, "The missing memristor found," Nature 453, 80 (2008). 10.1038/nature06932
10. 2 colloidal films," Nature 353, 737 (1991). 10.1038/353737a0
11. U. Diebold, "The surface science of titanium dioxide," Surf. Sci. Rep. 48, 53-229 (2003). 10.1016/S0167-5729(02)00100-0
12. U. Russo, D. Ielmini, C. Cagli et al., "Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices," IEEE Trans. Electron Devices 56 (2), 186-192 (2009). 10.1109/TED.2008.2010583
13. D. Ielmini, F. Nardi, and C. Cagli, "Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories," Nanotechnology 22, 254022 (2011). 10.1088/0957-4484/22/25/254022
14. Y. Du, H. Pan, S. Wang et al., "Symmetrical negative differential resistance behavior of a resistive switching device," ACS Nano 6, 2517 (2012). 10.1021/nn204907t
15. S. B. Lee, J. S. Lee, S. H. Chang et al., "Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching," Appl. Phys. Lett. 98, 033502 (2011). 10.1063/1.3543776
16. R. Fors, S. Khartsev, and A. Grishin, "Giant resistance switching in metal-insulator-manganite junctions: Evidence for Mott transition," Phys. Rev. B 71 (4), 045305 (2005). 10.1103/PhysRevB.71.045305
17. 2 resistive switching memory," Nat. Nanotechnol. 5, 148-153 (2010). 10.1038/nnano.2009.456
18. Y. C. Yang, F. Pan, Q. Liu et al., "Fully room-temperature- fabricated nonvolatile resistive memory for ultrafast and high-density memory application," Nano Lett. 9 (4), 1636-1643 (2009). 10.1021/nl900006g
19. 2/Pt resistive switching cells depending on atmosphere," J. Appl. Phys. 104, 123716 (2008). 10.1063/1.3043879
20. 3," Nature Mater. 5 (4), 312-320 (2006). 10.1038/nmat1614
21. S. H. Jo and W. Lu, "CMOS compatible nanoscale nonvolatile resistance switching memory," Nano Lett. 8 (2), 392-397 (2008). 10.1021/nl073225h
22. 2 for resistive switching memory," IEEE Electron Device Lett. 32 (2), 197 (2011). 10.1109/LED.2010.2091489
23. 2 thin-film devices," Appl. Phys. Lett. 102, 013506 (2013). 10.1063/1.4774089
24. 2-x/Pt matrix," Curr. Appl. Phys. 11, e66 (2011). 10.1016/j.cap.2010.11.125
25. 2 memory films," Electrochem. Solid-State Lett. 12 (4), H135-H137 (2009). 10.1149/1.3074332
26. Z. Zhang, C. -Yu Chen, F. Crnogorac et al., "Low-temperature monolithic three-layer 3-D process for FPGA," IEEE Electron Device Lett. 34 (8), 1044 (2013). 10.1109/LED.2013.2266111
27. S. Kim, H. Young Jeong, S. K. Kim et al., "Flexible memristive memory array on plastic substrates," Nano Lett. 11, 5438-5442 (2011). 10.1021/nl203206h
28. 2 films sputtered on unheated substrate," Surf. Coat. Technol. 153, 93-99 (2002). 10.1016/S0257-8972(01)01553-5
29. P. Waldner and G. Eriksson, "Thermodynamic modeling of the system titanium-oxygen," CALPHAD: Comput. Coupling Phase Diagrams Thermochem. 23, 189 (1999). 10.1016/S0364-5916(99)00025-5
30. 2 from first principles," Phys. Rev. B 76, 045217 (2007). 10.1103/PhysRevB.76.045217
31. 2 rutile (110) surface," Surface Science 601, 5034-5041 (2007). 10.1016%2Fj.susc.2007.08.025
32. L. A. Bursill and B. G. Hyde, "Crystallographic shear in the higher titanium oxides: Structure, texture, mechanisms and thermodynamics," Prog. Solid State Chem. 7, 177 (1972). 10.1016/0079-6786(72)90008-8
33. 2 single crystal," Phys. Status Solidi A 242, R88 (2005). 10.1002/pssb.200541186
34. R. Waser, R. Dittmann, M Salinga, and M. Wuttig, "Function by defects at the atomic scale-New concepts for non-volatile memories," Solid-State Electron. 54, 830 (2010). 10.1016/j.sse.2010.04.043
35. 2 films prepared using reactive RF magnetron sputtering," J. Korean Phys. Soc. 41 (1), 67 (2002).
36. Y. Yang, P. Gao, S. Gaba, T. Chang, X. Pan, and W. Lu, "Observation of conducting filament growth in nanoscale resistive memories," Nat. Commun. 3, 732 (2012). 10.1038%2Fncomms1737
37. 2-x," Phys. Rev. B 73, 193202 (2006). 10.1103/PhysRevB.73.193202
38. C. Yoshida et al., "Direct observation of oxygen movement during resistance switching in NiO/Pt film," Appl. Phys. Lett. 93, 042106 (2008). 10.1063/1.2966141
39. H. Young Jeong, "Microscopic origin of bipolar resistive switching of nanoscale titanium oxide thin films," Appl. Phys. Lett. 95, 162108 (2009). 10.1063/1.3251784
40. B. Gao et al., "A physical model for bipolar oxide-based resistive switching memory based on ion-transport-recombination effect," Appl. Phys. Lett. 98, 232108 (2011). 10.1063/1.3599490
41. 2 thin films," J. Electrochem. Soc. 157, G166 (2010). 10.1149/1.3428462
42. 2 thin films using RF magnetron sputtering method and study of their surface characteristics," Thin Solid Films 475, 183-188 (2005). 10.1016%2Fj.tsf.2004.08.033
43. S. Yu and H. -S. P. Wong, "Modeling the switching dynamics of programmable-metallization cell (PMC) memory and its application as synapse device for a neuromorphic computation system," IEDM Tech. Dig. 10, 520-523 (2010).
44. G. V. Samsonov, The Oxide Handbook (IFI/Plenum Press, New York, 1982).
45. 2-A prototypical memristive material," Nanotechnology 22, 254001 (2011). 10.1088/0957-4484/22/25/254001
46. 2/Pt structures," Nanotechnology 21, 305203 (2010). 10.1088/0957-4484/21/30/305203
47. 2-x," Phys. Chem. Solids 46 (12), 1397-1411 (1985). 10.1016/0022-3697(85)90079-4
48. x-Pt resistive switching memory: A trap-assisted-tunneling model," Appl. Phys. Lett. 99, 063507 (2011). 10.1063/1.3624472
49. 7 Magnéli phase under high pressure," Eur. Phys. J. B 34 (4), 421 (2003). 10.1140/epjb/e2003-00240-2