Interface-modified random circuit breaker network model applicable to both bipolar and unipolar resistance switching

Applied Physics Letters

Volumn 98, Issue 3, 2011, Pages

  Lee, S B ^a   Lee, J S ^a   Chang, S H ^a   Yoo, H K ^a   Kang, B S ^b   Kahng, B ^a   Lee, M J ^c   Kim, C J ^c   Noh, T W ^a  

^a Seoul National University   (South Korea)

^b Hanyang University   (South Korea)

^c Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT BREAKER; EXPERIMENTAL OBSERVATION; INTERFACE EFFECT; NETWORK MODELS; PERCOLATING NETWORKS; PERCOLATION MODELS; RESISTANCE STATE; RESISTANCE SWITCHING; SRTIO; THEORETICAL MODELS;

CAPACITANCE; CIRCUIT BREAKING ARCS; PLATINUM; SOLVENTS;

ELECTRIC CIRCUIT BREAKERS;

EID: 79251557831     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3543776     Document Type: Article

References (17)

1. G. Dearnaley, A. M. Stoneham, and D. V. Morgan, Rep. Prog. Phys. 0034-4885 33, 1129 (1970). 10.1088/0034-4885/33/3/306
2. S. C. Chae, J. S. Lee, S. Kim, S. B. Lee, S. H. Chang, C. Liu, B. Kahng, H. Shin, D. -W. Kim, C. U. Jung, S. Seo, M. -J. Lee, and T. W. Noh, Adv. Mater. (Weinheim, Ger.) 0935-9648 20, 1154 (2008). 10.1002/adma.200702024
3. S. H. Chang, J. S. Lee, S. C. Chae, S. B. Lee, C. Liu, B. Kahng, D. -W. Kim, and T. W. Noh, Phys. Rev. Lett. 0031-9007 102, 026801 (2009). 10.1103/PhysRevLett.102.026801
4. D. -H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. -S. Li, G. -S. Park, B. Lee, S. Han, M. Kim, and C. S. Hwang, Nat. Nanotechnol. 1748-3387 5, 148 (2010). 10.1038/nnano.2009.456
5. M. J. Rozenberg, I. H. Inoue, and M. J. Sánchez, Phys. Rev. Lett. 0031-9007 92, 178302 (2004). 10.1103/PhysRevLett.92.178302
6. M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, and B. P. Andreasson, Adv. Mater. (Weinheim, Ger.) 0935-9648 19, 2232 (2007). 10.1002/adma.200602915
7. Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. 0031-9007 98, 146403 (2007). 10.1103/PhysRevLett.98.146403
8. R. Waser, R. Dittmann, G. Staikov, and K. Szot, Adv. Mater. (Weinheim, Ger.) 0935-9648 21, 2632 (2009). 10.1002/adma.200900375
9. A. Sawa, Mater. Today 1369-7021 11, 28 (2008). 10.1016/S1369-7021(08) 70119-6
10. J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol. 1748-3387 3, 429 (2008). 10.1038/nnano.2008.160
11. D. S. Jeong, H. Schroeder, and R. Waser, Electrochem. Solid-State Lett. 1099-0062 10, G51 (2007). 10.1149/1.2742989
12. W. Shen, R. Dittmann, and R. Waser, J. Appl. Phys. 0021-8979 107, 094506 (2010). 10.1063/1.3369285
13. J. S. Lee, S. B. Lee, S. H. Chang, L. G. Gao, B. S. Kang, M. -J. Lee, C. J. Kim, T. W. Noh, and B. Kahng, Phys. Rev. Lett. 0031-9007 105, 205701 (2010). 10.1103/PhysRevLett.105.205701
14. S. B. Lee, S. Park, J. S. Lee, S. C. Chae, S. H. Chang, M. H. Jung, Y. Jo, B. Kahng, B. S. Kang, M. -J. Lee, and T. W. Noh, Appl. Phys. Lett. 0003-6951 95, 122112 (2009). 10.1063/1.3237167
15. See supplementary material at http://dx.doi.org/10.1063/1.3543776 E-APPLAB-98-030103 to get the detailed simulation method for the interface-modified RCB network model (Fig. S1), the simulation I-V curves of reversible RS-type changes between BRS and URS (Fig. S2), the configuration changes of an irreversible change from BRS to URS (Fig. S3), and the videos of reversible and irreversible RS-type changes (videos SV1-SV6).
16. J. J. Yang, F. Miao, M. D. Pickett, D. A. A. Ohlberg, D. R. Stewart, C. N. Lau, and R. S. Williams, Nanotechnology 0957-4484 20, 215201 (2009). 10.1088/0957-4484/20/21/215201
17. In reality, such a resistance change might be due to Joule heating effects, which can be also included in the original RCB network model (Ref.). However, for simplicity, we used the voltage-dependent switching rule for rl bulk → rh bulk (Ref.).