SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

Resistive switching of oxygen enhanced TiO2 thin-film devices

(4) Salaoru, Iulia a Prodromakis, Themistoklis a Khiat, Ali a Toumazou, Christofer a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH-TO-LOW; LOWER ENERGIES; NANO-DEVICES; ORDERS OF MAGNITUDE; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE STATE; RESISTIVE SWITCHING; SWITCHING DYNAMICS; TIO;

ELECTROFORMING; OXYGEN; PLATINUM; THIN FILM DEVICES;

TITANIUM DIOXIDE;

EID: 84872363289 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4774089 Document Type: Article

Times cited : (52)

References (33)

1
- 79952950219
- 10.1007/s00339-011-6264-9
- L. Chua, Appl. Phys. A 102, 765 (2011). 10.1007/s00339-011-6264-9
- (2011) Appl. Phys. A , vol.102 , pp. 765
- Chua, L.¹

2
- 34548685897
- 10.1088/0957-4484/18/36/365202
- G. S. Snider, Nanotechnology 18, 365202 (2007). 10.1088/0957-4484/18/36/ 365202
- (2007) Nanotechnology , vol.18 , pp. 365202
- Snider, G.S.¹

3
- 84860669856
- 10.1103/PhysRevE.85.041918
- A. Gelencser, T. Prodromakis, C. Toumazou, and T. Roska, Phys. Rev. E 85, 041918 (2012). 10.1103/PhysRevE.85.041918
- (2012) Phys. Rev. e , vol.85 , pp. 041918
- Gelencser, A.¹ Prodromakis, T.² Toumazou, C.³ Roska, T.⁴

4
- 77951576344
- 10.1002/adma.200903680
- T. Hasegawa, T. Ohno, K. Terabe, T. Tsurvoka, T. Nakayama, J. K. Gimzewski, and M. Aono, Adv. Mater. 22, 1831 (2010). 10.1002/adma.200903680
- (2010) Adv. Mater. , vol.22 , pp. 1831
- Hasegawa, T.¹ Ohno, T.² Terabe, K.³ Tsurvoka, T.⁴ Nakayama, T.⁵ Gimzewski, J.K.⁶ Aono, M.⁷

5
- 77951026760
- 10.1021/nl904092h
- S. H. Jo, T. Chang, I. Ebong, B. B. Bhadviya, P. Mazumder, and W. Lu, Nano Lett. 10, 1297 (2010). 10.1021/nl904092h
- (2010) Nano Lett. , vol.10 , pp. 1297
- Jo, S.H.¹ Chang, T.² Ebong, I.³ Bhadviya, B.B.⁴ Mazumder, P.⁵ Lu, W.⁶

6
- 84872283075
- e-print arXiv:1108.4299 [physics.bio-ph]
- W. Cai, R. Tetzlaff, and F. Ellinger, e-print arXiv:1108.4299 [physics.bio-ph].
- Cai, W.¹ Tetzlaff, R.² Ellinger, F.³

7
- 84860660887
- 10.3389/fnins.2011.00026
- L. Camunas-Mesa, C. Zamarreno-Ramos, J. A. Perez-Carrasco, T. Masquelier, T. Serrano Gotarredona, and B. Linares-Barranco, Front. Neurosci. 5, 26 (2011). 10.3389/fnins.2011.00026
- (2011) Front. Neurosci. , vol.5 , pp. 26
- Camunas-Mesa, L.¹ Zamarreno-Ramos, C.² Perez-Carrasco, J.A.³ Masquelier, T.⁴ Serrano Gotarredona, T.⁵ Linares-Barranco, B.⁶

8
- 2942548117
- 10.1103/PhysRevLett.92.178302
- M. J. Rosenberg, I. H. Inoue, and M. J. Sánchez, Phys. Rev. Lett. 92, 178302 (2004). 10.1103/PhysRevLett.92.178302
- (2004) Phys. Rev. Lett. , vol.92 , pp. 178302
- Rosenberg, M.J.¹ Inoue, I.H.² Sánchez, M.J.³

9
- 64549149261
- 10.1109/IEDM.2008.4796677
- H. Y. Lee, P. S. Chen, T. Y. Wu, Y. S. Chen, C. C. Wang, P. J. Tzeng, C. H. Lin, F. Chen, C. H. Lien, and M. J. Tsai, Tech. Dig.-Int. Electron Devices Meet. 2008, 297. 10.1109/IEDM.2008.4796677
- Tech. Dig. - Int. Electron Devices Meet. , vol.2008 , pp. 297
- Lee, H.Y.¹ Chen, P.S.² Wu, T.Y.³ Chen, Y.S.⁴ Wang, C.C.⁵ Tzeng, P.J.⁶ Lin, C.H.⁷ Chen, F.⁸ Lien, C.H.⁹ Tsai, M.J.¹⁰

10
- 84863020678
- in, IEDM11-729, Washington, DC, 5-7 December 2011, DOI: 10.1109/IEDM.2011.6131652
- B. Govoreanu, G. S. Kar, Y.-Y. Chen, V. Paraschiv, S. Kubicek, A. Fantini, I. P. Radu, L. Goux, S. Clima, R. Degraeve, J. Jossart, O. Richard, T. Vandeweyer, K. Seo, P. Hendrickx, G. Pourtois, H. Bender, L. Altimime, D. J. Wouters, J. A. Kittl, and M. Jurczak, in IEEE International Electron Devices Meeting (IEDM), IEDM11-729, Washington, DC, 5-7 December 2011, p. 31.6.1, DOI: 10.1109/IEDM.2011.6131652.
- IEEE International Electron Devices Meeting (IEDM) , pp. 3161
- Govoreanu, B.¹ Kar, G.S.² Chen, Y.-Y.³ Paraschiv, V.⁴ Kubicek, S.⁵ Fantini, A.⁶ Radu, I.P.⁷ Goux, L.⁸ Clima, S.⁹ Degraeve, R.¹⁰ Jossart, J.¹¹ Richard, O.¹² Vandeweyer, T.¹³ Seo, K.¹⁴ Hendrickx, P.¹⁵ Pourtois, G.¹⁶ Bender, H.¹⁷ Altimime, L.¹⁸ Wouters, D.J.¹⁹ Kittl, J.A.²⁰ Jurczak, M.²¹ more..

11
- 0015127532
- 10.1109/T-ED.1971.17233
- L. Chua, IEEE Trans. 18, 507 (1971). 10.1109/T-ED.1971.17233
- (1971) IEEE Trans. , vol.18 , pp. 507
- Chua, L.¹

12
- 43049126833
- 10.1038/nature06932
- D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, Nature 453, 80 (2008). 10.1038/nature06932
- (2008) Nature , vol.453 , pp. 80
- Strukov, D.B.¹ Snider, G.S.² Stewart, D.R.³ Williams, R.S.⁴

13
- 84860215095
- 10.1038/nmat3338
- T. Prodromakis, C. Toumazou, and L. O. Chua, Nature Mater. 11, 478 (2012). 10.1038/nmat3338
- (2012) Nature Mater. , vol.11 , pp. 478
- Prodromakis, T.¹ Toumazou, C.² Chua, L.O.³

14
- 79956107859
- 10.1088/0957-4484/22/25/254022
- D. Ielmini, F. Nardi, and C. Cagli, Nanotechnology 22, 254022 (2011). 10.1088/0957-4484/22/25/254022
- (2011) Nanotechnology , vol.22 , pp. 254022
- Ielmini, D.¹ Nardi, F.² Cagli, C.³

15
- 79956090576
- 10.1088/0957-4484/22/25/254027
- V. V. Zhirnov, R. Meade, R. K. Cavin, and G. Sandhu, Nanotechnology 22, 254027 (2011). 10.1088/0957-4484/22/25/254027
- (2011) Nanotechnology , vol.22 , pp. 254027
- Zhirnov, V.V.¹ Meade, R.² Cavin, R.K.³ Sandhu, G.⁴

16
- 33646885556
- 10.1063/1.2204649
- D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U-In. Chung, J. T. Moon, and B. I. Ryu, Appl. Phys. Lett. 88, 202102 (2006). 10.1063/1.2204649
- (2006) Appl. Phys. Lett. , vol.88 , pp. 202102
- Kim, D.C.¹ Seo, S.² Ahn, S.E.³ Suh, D.-S.⁴ Lee, M.J.⁵ Park, B.-H.⁶ Yoo, I.K.⁷ Baek, I.G.⁸ Kim, H.-J.⁹ Yim, E.K.¹⁰ Lee, J.E.¹¹ Park, S.O.¹² Kim, H.S.¹³ Chung, U.-In.¹⁴ Moon, J.T.¹⁵ Ryu, B.I.¹⁶

17
- 79251557831
- 10.1063/1.3543776
- S. B. Lee, J. S. Lee, S. H. Chang, H. K. Yoo, B. S. Kang, B. Kahng, M.-J. Lee, C. J. Kim, and T. W. Noh, Appl. Phys. Lett. 98, 033502 (2011). 10.1063/1.3543776
- (2011) Appl. Phys. Lett. , vol.98 , pp. 033502
- Lee, S.B.¹ Lee, J.S.² Chang, S.H.³ Yoo, H.K.⁴ Kang, B.S.⁵ Kahng, B.⁶ Lee, M.-J.⁷ Kim, C.J.⁸ Noh, T.W.⁹

18
- 78149260996
- 10.1103/PhysRevB.82.155321
- J. H. Hur, M.-J. Lee, C. Bum Lee, Y.-B. Kim, and C.-J. Kim, Phys. Rev. B. 82, 155321 (2010). 10.1103/PhysRevB.82.155321
- (2010) Phys. Rev. B. , vol.82 , pp. 155321
- Hur, J.H.¹ Lee, M.-J.² Bum Lee, C.³ Kim, Y.-B.⁴ Kim, C.-J.⁵

19
- 79958033522
- 10.1016/j.mee.2011.03.050
- J. Park, S. Jung, J. Lee, W. Lee, S. Kim, J. Shin, and H. Hwang, Microelectron. Eng. 88, 1136 (2011). 10.1016/j.mee.2011.03.050
- (2011) Microelectron. Eng. , vol.88 , pp. 1136
- Park, J.¹ Jung, S.² Lee, J.³ Lee, W.⁴ Kim, S.⁵ Shin, J.⁶ Hwang, H.⁷

20
- 84859126198
- 10.1021/nn204907t
- Y. Du, H. Pan, S. Wang, T. Wu, Y. P. Feng, J. Pan, and A. T. S. Wee, ACS Nano 6, 2517 (2012). 10.1021/nn204907t
- (2012) ACS Nano , vol.6 , pp. 2517
- Du, Y.¹ Pan, H.² Wang, S.³ Wu, T.⁴ Feng, Y.P.⁵ Pan, J.⁶ Wee, A.T.S.⁷

21
- 35748985544
- 10.1038/nmat2009
- M. Wuttig and N. Yamada, Nature Mater. 6, 824 (2007). 10.1038/nmat2009
- (2007) Nature Mater. , vol.6 , pp. 824
- Wuttig, M.¹ Yamada, N.²

22
- 79151482768
- 10.1109/LED.2010.2091489
- S. G. Park, B. Magyari-Kope, and Y. Nishi, IEEE Electron Device Lett. 32 (2), 197 (2011). 10.1109/LED.2010.2091489
- (2011) IEEE Electron Device Lett. , vol.32 , Issue.2 , pp. 197
- Park, S.G.¹ Magyari-Kope, B.² Nishi, Y.³

23
- 46749093701
- 10.1038/nnano.2008.160
- J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and R. S. Williams, Nat. Nanotechnol. 3, 429 (2008). 10.1038/nnano.2008.160
- (2008) Nat. Nanotechnol. , vol.3 , pp. 429
- Yang, J.J.¹ Pickett, M.D.² Li, X.³ Ohlberg, D.A.A.⁴ Stewart, D.R.⁵ Williams, R.S.⁶

24
- 67649143212
- 10.1088/0957-4484/20/21/215201
- J. J. Yang, F. Miao, M. D. Pickett, D. A. A. Ohlberg, D. R. Stewart, C. N. Lau, and R. S. Williams, Nanotechnology 20, 215201 (2009). 10.1088/0957-4484/20/21/215201
- (2009) Nanotechnology , vol.20 , pp. 215201
- Yang, J.J.¹ Miao, F.² Pickett, M.D.³ Ohlberg, D.A.A.⁴ Stewart, D.R.⁵ Lau, C.N.⁶ Williams, R.S.⁷

25
- 58149251884
- 10.1063/1.3043879
- D. S. Jeong, H. Schroeder, U. Breuer, and R. Waser, J. Appl. Phys. 104, 123716 (2008). 10.1063/1.3043879
- (2008) J. Appl. Phys. , vol.104 , pp. 123716
- Jeong, D.S.¹ Schroeder, H.² Breuer, U.³ Waser, R.⁴

26
- 79956149687
- 10.1088/0957-4484/22/25/254007
- F. Miao, J. J. Yang, J. Borghetti, G. Medeiros-Ribeiro, and R. S. Williams, Nanotechnology 22, 254007 (2011). 10.1088/0957-4484/22/25/254007
- (2011) Nanotechnology , vol.22 , pp. 254007
- Miao, F.¹ Yang, J.J.² Borghetti, J.³ Medeiros-Ribeiro, G.⁴ Williams, R.S.⁵

27
- 0004136983
- (Oxford University Press)
- D. M. Smyth, The Defect Chemistry of Metal Oxides (Oxford University Press, 2000).
- (2000) The Defect Chemistry of Metal Oxides
- Smyth, D.M.¹

28
- 34250324730
- 10.1002/pssb.200642514
- J. Nowotny, T. Bak, and T. Burg, Phys. Status Solidi B 244 (6), 2037 (2007). 10.1002/pssb.200642514
- (2007) Phys. Status Solidi B , vol.244 , Issue.6 , pp. 2037
- Nowotny, J.¹ Bak, T.² Burg, T.³

29
- 42649137623
- 10.1021/jp077275m
- M. K. Nowotny, L. R. Sheppard, T. Bak, and J. Nowotny, J. Phys. Chem. C 112, 5275 (2008). 10.1021/jp077275m
- (2008) J. Phys. Chem. C , vol.112 , pp. 5275
- Nowotny, M.K.¹ Sheppard, L.R.² Bak, T.³ Nowotny, J.⁴

30
- 77249122953
- 10.1016/j.matlet.2010.01.061
- M. K. Nowotny, P. Bogdanoff, T. Dittrich, S. Fiechter, A. Fujishima, and H. Tributsch, Mater. Lett. 64, 928 (2010). 10.1016/j.matlet.2010.01.061
- (2010) Mater. Lett. , vol.64 , pp. 928
- Nowotny, M.K.¹ Bogdanoff, P.² Dittrich, T.³ Fiechter, S.⁴ Fujishima, A.⁵ Tributsch, H.⁶

31
- 84855321278
- 10.1179/1743676111Y.0000000027
- T. Bak, P. Bogdanoff, S. Fiechter, and J. Nowotny, Adv. Appl. Ceram. 111, 62 (2012). 10.1179/1743676111Y.0000000027
- (2012) Adv. Appl. Ceram. , vol.111 , pp. 62
- Bak, T.¹ Bogdanoff, P.² Fiechter, S.³ Nowotny, J.⁴

32
- 79960927022
- 10.1016/j.ca2010.11.125
- Y. C. Bae, A. R. Lee, J. S. Kwak, H. Im, and J. P. Hong, Curr. Appl. Phys. 11, e66 (2011). 10.1016/j.cap.2010.11.125
- (2011) Curr. Appl. Phys. , vol.11 , pp. 66
- Bae, Y.C.¹ Lee, A.R.² Kwak, J.S.³ Im, H.⁴ Hong, J.P.⁵

33
- 11944263858
- 10.1109/JSSC.2004.837244
- S. Kaeriyama, T. Sakamoto, H. Sunamura, M. Mizuno, H. Kawaura, T. Hasegawa, K. Terabe, T. Nakayama, and M. Aono, IEEE J. Solid-State Circuits 40, 168 (2005). 10.1109/JSSC.2004.837244
- (2005) IEEE J. Solid-State Circuits , vol.40 , pp. 168
- Kaeriyama, S.¹ Sakamoto, T.² Sunamura, H.³ Mizuno, M.⁴ Kawaura, H.⁵ Hasegawa, T.⁶ Terabe, K.⁷ Nakayama, T.⁸ Aono, M.⁹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.