Modeling the switching dynamics of Programmable-Metallization-Cell (PMC) memory and its application as synapse device for a neuromorphic computation system

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2010, Pages

  Yu, Shimeng ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIOLOGICAL SYNAPSE; CELL RESISTANCE; COMPUTATION SYSTEMS; EXPERIMENTAL DATA; METALLIZATIONS; NEUROMORPHIC; PHYSICAL MODEL; PROGRAMMING PULSE; PULSE AMPLITUDE; SPICE MODEL; SPIKE-TIMING-DEPENDENT PLASTICITY; SWITCHING DYNAMICS; SWITCHING PARAMETERS; SWITCHING PROCESS; TIME-DEPENDENT; TRANSIENT CHARACTERISTIC;

CIRCUIT SIMULATION; ELECTRON DEVICES; METALLIZING; SPICE; SWITCHING; SYSTEMS ANALYSIS;

MATHEMATICAL MODELS;

EID: 79951816422     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2010.5703410     Document Type: Conference Paper

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